Structural stability and electrical properties of AlB2-type MnB2 under high pressure

doi:10.1088/1674-1056/23/1/016102

中国物理B ›› 2014, Vol. 23 ›› Issue (1): 16102-016102.doi: 10.1088/1674-1056/23/1/016102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Structural stability and electrical properties of AlB₂-type MnB₂ under high pressure

孟祥旭, 范靖, 包括, 李芳菲, 黄晓丽, 李岩, 田夫波, 段德芳, 靳锡联, 朱品文, 何志, 周强, 高春晓, 刘冰冰, 崔田

State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China

收稿日期:2013-03-15 修回日期:2013-09-06 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CB808200), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1132), the National Natural Science Foundation of China (Grant Nos. 51032001, 11074090, 10979001, and 51025206), and the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences (Grant No. DE-AC02-98CH10886).

Structural stability and electrical properties of AlB₂-type MnB₂ under high pressure

Meng Xiang-Xu (孟祥旭), Fan Jing (范靖), Bao Kuo (包括), Li Fang-Fei (李芳菲), Huang Xiao-Li (黄晓丽), Li Yan (李岩), Tian Fu-Bo (田夫波), Duan De-Fang (段德芳), Jin Xi-Lian (靳锡联), Zhu Pin-Wen (朱品文), He Zhi (何志), Zhou Qiang (周强), Gao Chun-Xiao (高春晓), Liu Bing-Bing (刘冰冰), Cui Tian (崔田)

State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China

Received:2013-03-15 Revised:2013-09-06 Online:2013-11-12 Published:2013-11-12
Contact: Cui Tian E-mail:cuitian@jlu.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CB808200), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1132), the National Natural Science Foundation of China (Grant Nos. 51032001, 11074090, 10979001, and 51025206), and the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences (Grant No. DE-AC02-98CH10886).

摘要/Abstract

摘要： The structural stability and electrical properties of AlB₂-type MnB₂ were studied based on high pressure angle-dispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell (DAC) and first-principles calculations under high pressure. The x-ray diffraction results show that the structure of AlB₂-type MnB₂ remains stable up to 42.6 GPa. From the equation of state of MnB₂, we obtained a bulk modulus value of 169.9±3.7 GPa with a fixed pressure derivative of 4, which indicates that AlB₂-type MnB₂ is a hard and incompressible material. The electrical resistance undergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure.

关键词: transition metal compounds, high pressure effects, structural stability, electrical properties

Abstract: The structural stability and electrical properties of AlB₂-type MnB₂ were studied based on high pressure angle-dispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell (DAC) and first-principles calculations under high pressure. The x-ray diffraction results show that the structure of AlB₂-type MnB₂ remains stable up to 42.6 GPa. From the equation of state of MnB₂, we obtained a bulk modulus value of 169.9±3.7 GPa with a fixed pressure derivative of 4, which indicates that AlB₂-type MnB₂ is a hard and incompressible material. The electrical resistance undergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure.

Key words: transition metal compounds, high pressure effects, structural stability, electrical properties

中图分类号: (X-ray diffraction and scattering)

61.05.C-

61.50.-f (Structure of bulk crystals) 61.50.Ks (Crystallographic aspects of phase transformations; pressure effects) 62.50.-p (High-pressure effects in solids and liquids)

孟祥旭, 范靖, 包括, 李芳菲, 黄晓丽, 李岩, 田夫波, 段德芳, 靳锡联, 朱品文, 何志, 周强, 高春晓, 刘冰冰, 崔田. Structural stability and electrical properties of AlB₂-type MnB₂ under high pressure[J]. 中国物理B, 2014, 23(1): 16102-016102.

参考文献 39

[1]	Wang Z G, Zhang Y, Wen Y H and Zhu Z Z 2010 Acta Phys. Sin. 59 2051 (in Chinese)
[2]	Li R Q, Pan C L, Wen Y H and Zhu Z Z 2009 Acta Phys. Sin. 58 2752 (in Chinese)
[3]	Wu J R and Yang C W 2002 Chin. Phys. 11 1221
[4]	Shen H X, Cai N L, Wen Y H and Zhu Z Z 2005 Acta Phys. Sin. 54 5362 (in Chinese)
[5]	Xiao W S, Tan D Y, Xiong X L, Liu J and Xu J 2010 Proc. Natl. Acad. Sci. USA 107 14026
[6]	Yoo C S, Maddox B, Klepeis J H P, Iota V, Evans W and McMahan A 2005 Phys. Rev. Lett. 94 115502
[7]	Shekar N V C, Sahu P C, Sekar M, Yousuf M and Rajan K G 1996 Physica B 228 369
[8]	Maple M B and Wohlleben D 1971 Phys. Rev. Lett. 27 511
[9]	Rozenberg G K, Pasternak M P, Xu W M, Dubrovinsky L S, Carlson S and Taylor R D 2005 Europhys. Lett. 71 228
[10]	Guo W L, Liang Y C and Fang Z 2007 Acta Phys. Sin. 56 4847 (in Chinese)
[11]	Kaner R B, Gilman J J and Tolbert S H 2005 Science 308 1268
[12]	Pereira A S, Perottoni C A, Jornada J A H D, Leger J M and Haines J 2002 J. Phys.: Condens. Matter 14 10615
[13]	Amulele G M, Manghnani M H and Somayazulu M 2006 J. Appl. Phys. 99 023522
[14]	Halevy I, Beck A, Yaar I, Kahane S, Levy O, Auster E, Ettedgui, Caspi E N, ORivin, Berant Z and Hu J 2007 Hyperfine Interact. 177 57
[15]	Li X F, Ji G F, Zhao F, Chen X R and Alfe D 2009 J. Phys.: Condens. Matter 21 025505
[16]	Aydin S and Simsek M 2009 Phys. Rev. B 80 134107
[17]	Fan J, Bao K, Jin X L, Meng X X, Duan D F, Liu B B and Cui T 2012 J. Mater. Chem. 22 17630
[18]	Zhu P W, Jia X P, Chen H Y, Guo W L, Chen L X, Li D M, Ma H A, Ren G Z and Zou G T 2002 Solid State Commun. 123 43
[19]	Meng X X, Bao K, Zhu P W, He Z, Tao Q, Li J J, Mao Z P and Cui T 2012 J. Appl. Phys. 111 112616
[20]	Mao H K, Xu J and Bell P M 1986 J. Geophys. Res. 91 4673
[21]	Hammersley A P, Svensson S O, Hanfland M, Fitch A N and Hausermann D 1996 High Press. Res. 14 235
[22]	Han Y H, Gao C X, Liu H W, Pan Y W, Luo J F, Li M, He C Y, Huang X W, Zou G T, Li Y C, Li X D and Liu J 2005 Appl. Phys. Lett. 86 064104
[23]	Kresse G and Hafner J 1993 Phys. Rev. B 47 558
[24]	Kresse G and Hafner J 1994 Phys. Rev. B 49 14251
[25]	Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
[26]	Kresse G and Furthmüller J 1996 Comput. Mater. Sci. 6 15
[27]	Vanderbilt D 1990 Phys. Rev. B 41 7892
[28]	Blöchl P E 1994 Phys. Rev. B 50 17953
[29]	Kresse G and Joubert J 1999 Phys. Rev. B 59 1758
[30]	Perdew J P, Chevary J A, Vosko S H, Jackson K A, Pederson M R, D J Singh and Fiolhais C 1992 Phys. Rev. B 46 6671
[31]	Perdew J P, Chevary J A, Vosko S H, Jackson K A, Pederson M R, Singh D J and Fiolhais C 1993 Phys. Rev. B 48 4978
[32]	Aronsson B 1960 Acta Chem. Scand. 14 1414
[33]	Birch F 1938 J. Appl. Phys. 9 279
[34]	Vajeeston P, Ravindran P, Ravi C and Asokamani R 2001 Phys. Rev. B 63 045115
[35]	Smith J L and Kmetko E A 1983 J. Less Common. Metals 90 83
[36]	Andersson L, Dellby B and Myers H P 1966 Solid State Commun. 4 77
[37]	Aberg D, Erhart P, Crowhurst J, Zaug J M, Goncharov A F and Sadigh B 2010 Phys. Rev. B 82 104116
[38]	Olsen J S, Gerward L, Benedict U and Itie J P 1985 Physica B 133 129
[39]	Ono S and Mibe K 2010 Phys. Earth Planet. In. 180 1

Structural stability and electrical properties of AlB₂-type MnB₂ under high pressure

Structural stability and electrical properties of AlB₂-type MnB₂ under high pressure

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