Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 45204-045204.doi: 10.1088/1674-1056/22/4/045204
• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇 下一篇
刘相梅a, 宋远红b, 姜巍a, 易林a
Liu Xiang-Mei (刘相梅)a, Song Yuan-Hong (宋远红)b, Jiang Wei (姜巍)a, Yi Lin (易林)a
摘要: A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH4, N2, and NH3 in radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2/NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing significantly the electron density.
中图分类号: (Plasma simulation)