The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH4/NH3/N2 plasmas: Two-dimensional simulations

doi:10.1088/1674-1056/22/4/045204

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 45204-045204.doi: 10.1088/1674-1056/22/4/045204

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇下一篇

The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH₄/NH₃/N₂ plasmas: Two-dimensional simulations

刘相梅^a, 宋远红^b, 姜巍^a, 易林^a

a School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

收稿日期:2012-07-16 修回日期:2012-09-18 出版日期:2013-03-01 发布日期:2013-03-01
基金资助:
Project supported by China Postdoctoral Science Foundation (Grant No. 2012M511603), the National Natural Science Foundation of China (Grant Nos. 11105057 and 10775025), the Natural Science Foundation of Hubei Province of China (Grant No. 2007ABA035), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0073).

The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH₄/NH₃/N₂ plasmas: Two-dimensional simulations

Liu Xiang-Mei (刘相梅)^a, Song Yuan-Hong (宋远红)^b, Jiang Wei (姜巍)^a, Yi Lin (易林)^a

a School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

Received:2012-07-16 Revised:2012-09-18 Online:2013-03-01 Published:2013-03-01
Contact: Yi Lin E-mail:yilin@mail.hust.edu.cn
Supported by:
Project supported by China Postdoctoral Science Foundation (Grant No. 2012M511603), the National Natural Science Foundation of China (Grant Nos. 11105057 and 10775025), the Natural Science Foundation of Hubei Province of China (Grant No. 2007ABA035), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0073).

摘要/Abstract

摘要： A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH₄, N₂, and NH₃ in radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N₂/NH₃ ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing significantly the electron density.

关键词: capacitively coupled plasma, process conditions effects, SiH₄/NH₃/N₂ discharges

Abstract: A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH₄, N₂, and NH₃ in radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N₂/NH₃ ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing significantly the electron density.

Key words: capacitively coupled plasma, process conditions effects, SiH₄/NH₃/N₂ discharges

中图分类号: (Plasma simulation)

52.65.-y

52.25.-b (Plasma properties) 52.80.Pi (High-frequency and RF discharges)

刘相梅, 宋远红, 姜巍, 易林. The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH₄/NH₃/N₂ plasmas: Two-dimensional simulations[J]. Chin. Phys. B, 2013, 22(4): 45204-045204.

Liu Xiang-Mei (刘相梅), Song Yuan-Hong (宋远红), Jiang Wei (姜巍), Yi Lin (易林). The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH₄/NH₃/N₂ plasmas: Two-dimensional simulations[J]. Chin. Phys. B, 2013, 22(4): 45204-045204.

参考文献 23

[1]	Sleeck E, Schaekers M, Shi X, Kunnen E, Degroote B, Jurczak M, de Potter, de ten Broeck M and Augendre E 2005 Microelectron. Reliab. 45 865
[2]	Liu X M, Song Y H and Wang Y N 2011 Chin. Phys. B 20 065205
[3]	Olson J M 2002 Mater. Sci. Semicond. Process. 5 51
[4]	Kubacki R M, Ionic Syst and Salinas C A 1995 IEEE. Trans. Compon. Packag. Manuf. Technol. 18 471
[5]	Lieberman M A and Lichtenberg A J 2005 Principles of Plasma Discharges and Materials Processing, 2nd edn. (New York: Wiley-Interscience)
[6]	Sze S M 1985 Semiconductor Devices: Physics and Technology (New York: Wiley)
[7]	Smith D L, Alimonda A S, Chen C C, Ready S E and Wacker B 1990 J. Electrochem. Soc. 137 614
[8]	Ray S K, Das S, Maiti C K, Lahiri S K and Chakraborti N B 1994 J. Appl. Phys. 75 8145
[9]	Kushner M J 1992 J. Appl. Phys. 71 4173
[10]	Ohta H, Nagashima A, Hori M and Goto T 2001 J. Appl. Phys. 89 5083
[11]	Nowling G R, Babayan S E, Jankovic V and Hicks R F 2002 Plasma Sources Sci. Technol. 11 97
[12]	Bavafa M, Ilati H and Rashidian B 2008 Semicond. Sci. Technol. 23 095023
[13]	De Bleecker K, Bogaerts A, Gijbels R and Goedheer W 2004 Phys. Rev. E 69 056409
[14]	Nienhuis G J, Goedheer W J, Hamers E A G, van Sark W G J H M and Bezemer J 1997 J. Appl. Phys. 82 2060
[15]	Fridman A A, Boufendi L, Hbid T, Potapkin B V and Bouchoule A 1996 J. Appl. Phys. 79 1303
[16]	Dollet A, Couderc J P and Despax B 1995 Plasma Sources Sci. Technol. 4 94
[17]	De Bleecker K, Herrebout D, Bogaerts A, Gijbels R and Descamps P 2003 J. Phys. D: Appl. Phys. 36 1826
[18]	Hayashi M 1987 Swarm Studies and Inelastic Electron-Molecule Collisions, eds. Pitchford L C, McKay V B, Chutjian A and Trajmar S (New York: Springer) pp. 167-190
[19]	Perrin J, Leroy O and Bordage M C 1996 Plasma Phys. 36 3
[20]	McDaniel E W and Mason E A 1973 The Mobility and Diffusion of Ions in Gases (New York: Wiley)
[21]	Liu X M, Song Y H, Xu X and Wang Y N 2011 Phys. Plasmas 18 083508
[22]	Smith D L, Alimonda A S, Chen C C, Ready S E and Wacker B 1990 J. Electrochem. Soc. 137 614
[23]	Volynets V, Shin H, Kang D and Sung D 2010 J. Phys. D: Appl. Phys. 43 085203

The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH₄/NH₃/N₂ plasmas: Two-dimensional simulations

The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH₄/NH₃/N₂ plasmas: Two-dimensional simulations

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 23

相关文章 9

Metrics

本文评价

推荐阅读 0

[1]	Wen-Chong Ouyang(欧阳文冲), Qi Liu(刘琦), Tao Jin(金涛), and Zheng-Wei Wu(吴征威). Plasma characteristics and broadband electromagnetic wave absorption in argon and helium capacitively coupled plasma[J]. 中国物理B, 2021, 30(9): 95203-095203.
[2]	Gui-Qin Yin(殷桂琴), Jing-Jing Wang(王兢婧), Shan-Shan Gao(高闪闪), Yong-Bo Jiang(姜永博), and Qiang-Hua Yuan(袁强华). Discharge characteristic of very high frequency capacitively coupled argon plasma[J]. 中国物理B, 2021, 30(9): 95204-095204.
[3]	Meryem Grari, CifAllah Zoheir, Yasser Yousfi, and Abdelhak Benbrik. Effect of pressure and space between electrodes on the deposition of SiN_xH_y films in a capacitively coupled plasma reactor[J]. 中国物理B, 2021, 30(5): 55205-055205.
[4]	韩道满, 刘永新, 高飞, 刘文耀, 徐军, 王友年. Measurements of argon metastable density using the tunable diode laser absorption spectroscopy in Ar and Ar/O₂[J]. 中国物理B, 2018, 27(6): 65202-065202.
[5]	刘悦, 赵璐璐, 周艳文. Effect of driving frequency on electron heating in capacitively coupled RF argon glow discharges at low pressure[J]. 中国物理B, 2017, 26(11): 115201-115201.
[6]	王帅, 龙海凤, 毕振华, 姜巍, 徐翔, 王友年. One-dimensional hybrid simulation of the electrical asymmetry effectcaused by the fourth-order harmonic in dual-frequencycapacitively coupled plasma[J]. 中国物理B, 2016, 25(11): 115202-115202.
[7]	徐东升, 邹帅, 辛煜, 苏晓东, 王栩生. Characteristics of dual-frequency capacitively coupled SF₆/O₂ plasma and plasma texturing of multi-crystalline silicon[J]. 中国物理B, 2014, 23(6): 65201-065201.
[8]	刘相梅, 宋远红, 王友年. Driving frequency effects on the mode transition in capacitively coupled argon discharges[J]. 中国物理B, 2011, 20(6): 65205-065205.
[9]	虞一青, 辛煜, 宁兆元. Diagnosis of a low pressure capacitively coupled argon plasma by using a simple collisional-radiative model[J]. 中国物理B, 2011, 20(1): 15207-015207.