Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation
张雪锋, 王莉, 刘杰, 魏崃, 许键
Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation
Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键)
Chin. Phys. B . 2013, (1): 17202 -017202 .  DOI: 10.1088/1674-1056/22/1/017202