Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

doi:10.1088/1674-1056/21/10/107201

中国物理B ›› 2012, Vol. 21 ›› Issue (10): 107201-107201.doi: 10.1088/1674-1056/21/10/107201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

白洪亮, 贺树敏, 徐同帅, 刘国磊, 颜世申, 朱大鹏, 代正坤, 杨丰帆, 代由勇, 陈延学, 梅良模

School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2012-02-09 修回日期:2012-04-01 出版日期:2012-09-01 发布日期:2012-09-01
基金资助:
Project supported by the State Key Project of Fundamental Research of China (Grant No. 2009CB929202) and the National Natural Science Foundation of China (Grant Nos. 10834001 and 51125004).

Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2012-02-09 Revised:2012-04-01 Online:2012-09-01 Published:2012-09-01
Contact: Liu Guo-Lei E-mail:liu-guolei@sdu.edu.cn
Supported by:
Project supported by the State Key Project of Fundamental Research of China (Grant No. 2009CB929202) and the National Natural Science Foundation of China (Grant Nos. 10834001 and 51125004).

摘要/Abstract

摘要： A series of high quality single crystalline epitaxial Zn_0.95Co_0.05O thin films is prepared by molecular beam epitaxy. Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10¹⁸ cm^-3-10²⁰ cm^-3 by changing the oxygen partial pressure during film growth. The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature. The ferromagnetism can be maintained up to room temperature. However, the anomalous Hall effect is observed only at low temperature and disappears above 160 K. This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

关键词: ZnCoO, variable range hopping, anomalous Hall effect

Abstract: A series of high quality single crystalline epitaxial Zn_0.95Co_0.05O thin films is prepared by molecular beam epitaxy. Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10¹⁸ cm^-3-10²⁰ cm^-3 by changing the oxygen partial pressure during film growth. The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature. The ferromagnetism can be maintained up to room temperature. However, the anomalous Hall effect is observed only at low temperature and disappears above 160 K. This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

Key words: ZnCoO, variable range hopping, anomalous Hall effect

中图分类号: (Conductivity phenomena in semiconductors and insulators)

72.20.-i

72.25.Dc (Spin polarized transport in semiconductors)

白洪亮, 贺树敏, 徐同帅, 刘国磊, 颜世申, 朱大鹏, 代正坤, 杨丰帆, 代由勇, 陈延学, 梅良模. Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film[J]. 中国物理B, 2012, 21(10): 107201-107201.

Bai Hong-Liang (白洪亮), He Shu-Min (贺树敏), Xu Tong-Shuai (徐同帅), Liu Guo-Lei (刘国磊), Yan Shi-Shen (颜世申), Zhu Da-Peng (朱大鹏), Dai Zheng-Kun (代正坤), Yang Feng-Fan (杨丰帆), Dai You-Yong (代由勇), Chen Yan-Xue (陈延学), Mei Liang-Mo (梅良模). Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film[J]. Chin. Phys. B, 2012, 21(10): 107201-107201.

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Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

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