中国物理B ›› 2012, Vol. 21 ›› Issue (5): 57303-057303.doi: 10.1088/1674-1056/21/5/057303

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Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

唐军1 2,康朝阳1,李利民1,刘忠良3,闫文盛1,韦世强1,徐彭寿1   

  1. 1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
    2. Hefei IRICO Epilight Technology Co., Ltd., Hefei 230011, China;
    3. School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, China
  • 收稿日期:2011-10-14 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 50872128), the Anhui Provincial Natural Science Foundation, China (Grant No. 11040606M64), and the Anhui Provincial Natural Science Foundation of Higher Education Institutions, China (Grant No. KJ2010B189).

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

Tang Jun(唐军)a)b), Kang Chao-Yang(康朝阳)a), Li Li-Min(李利民)a), Liu Zhong-Liang(刘忠良)c)†, Yan Wen-Sheng(闫文盛)a), Wei Shi-Qiang(韦世强)a), and Xu Peng-Shou(徐彭寿)a)‡   

  1. a. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
    b. Hefei IRICO Epilight Technology Co., Ltd., Hefei 230011, China;
    c. School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, China
  • Received:2011-10-14 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 50872128), the Anhui Provincial Natural Science Foundation, China (Grant No. 11040606M64), and the Anhui Provincial Natural Science Foundation of Higher Education Institutions, China (Grant No. KJ2010B189).

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摘要： A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.

关键词: graphene, SiC layer, sapphire substrate

Abstract: A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.

Key words: graphene, SiC layer, sapphire substrate

中图分类号:  (Electronic structure of graphene)

  • 73.22.Pr
74.25.nd (Raman and optical spectroscopy) 78.70.Dm (X-ray absorption spectra) 72.80.Sk (Insulators)