The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

doi:10.1088/1674-1056/20/9/097203

中国物理B ›› 2011, Vol. 20 ›› Issue (9): 97203-097203.doi: 10.1088/1674-1056/20/9/097203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The effect of a HfO₂ insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

毛维¹, 郝跃¹, 马晓华¹, 王冲¹, 张进成¹, 刘红侠¹, 毕志伟¹, 许晟瑞¹, 杨林安¹, 杨凌¹, 张凯¹, 张乃千¹, 裴轶¹, 杨翠²

(1)Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2011-03-12 修回日期:2011-05-24 出版日期:2011-09-15 发布日期:2011-09-15

The effect of a HfO₂ insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Mao Wei(毛维)^a)†,Yang Cui(杨翠)^b),Hao Yao(郝跃)^a), Ma Xiao-Hua(马晓华)^a), Wang Chong(王冲)^a),Zhang Jin-Cheng(张进成)^a), Liu Hong-Xia(刘红侠)^a), Bi Zhi-Wei(毕志伟)^a), Xu Sheng-Rui(许晟瑞)^a), Yang Lin-An(杨林安)^a), Yang Ling(杨凌)^a), Zhang Kai(张凯)^a), Zhang Nai-Qian(张乃千)^a),and Pei Yei(裴轶)^a)

^a Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; ^b School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2011-03-12 Revised:2011-05-24 Online:2011-09-15 Published:2011-09-15

摘要/Abstract

摘要： A GaN/Al_0.3Ga_0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO₂ insulator (HfO₂-FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO₂-FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO₂ insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.

Abstract: A GaN/Al_0.3Ga_0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO₂ insulator (HfO₂-FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO₂-FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO₂ insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.

Key words: HfO₂ insulator, HfO₂-FP-HEMT, FP efficiency, proportional design

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

毛维, 杨翠, 郝跃, 马晓华, 王冲, 张进成, 刘红侠, 毕志伟, 许晟瑞, 杨林安, 杨凌, 张凯, 张乃千, 裴轶. The effect of a HfO₂ insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT[J]. 中国物理B, 2011, 20(9): 97203-097203.

Mao Wei(毛维),Yang Cui(杨翠),Hao Yao(郝跃), Ma Xiao-Hua(马晓华), Wang Chong(王冲),Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Yang Lin-An(杨林安), Yang Ling(杨凌), Zhang Kai(张凯), Zhang Nai-Qian(张乃千),and Pei Yei(裴轶) . The effect of a HfO₂ insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT[J]. Chin. Phys. B, 2011, 20(9): 97203-097203.

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The effect of a HfO₂ insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

The effect of a HfO₂ insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

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