The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films

doi:10.1088/1674-1056/20/12/127701

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127701-127701.doi: 10.1088/1674-1056/20/12/127701

The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO₃ thin films

丁斌峰¹, 周生强²

(1)Department of Physics and Electronic Information, Langfang Teachers College, Langfang 065000, China;State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China; (2)State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China

收稿日期:2011-06-18 修回日期:2011-08-16 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10875004 and 11005005) and the National Basic Research Program of China (Grant No. 2010CB832904).

The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO₃ thin films

Ding Bin-Feng(丁斌峰)^a)b)† and Zhou Sheng-Qiang(周生强)^b)

^a Department of Physics and Electronic Information, Langfang Teachers College, Langfang 065000, China; ^b State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China

Received:2011-06-18 Revised:2011-08-16 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10875004 and 11005005) and the National Basic Research Program of China (Grant No. 2010CB832904).

摘要/Abstract

摘要：

Due to the fault of the first author, this article entitled “The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films”, published in “Chinese Physics B”, 2011，Vol.20, Issue 12, Article No. 127701, has been found to copy from the article entitled“Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO3 thin films”, published in “Journal of Applied Physics”, 2011，Vol.109, Issue 8, article No. 084105. So the above article in “Chinese Physics B” has been withdrawn from the publication.

5-at% Mn-doped and undoped BaTiO₃ thin films have been grown under different oxygen partial pressures by Pulsed Laser Deposition (PLD) on platinum-coated sapphire substrates. X-ray diffraction (XRD) measurements for all the thin films reveal a similar polycrystalline single-phase perovskite structure. Ferroelectricity is observed in the Mn-doped and undoped BaTiO₃ thin films grown under relatively high oxygen partial pressure. Ferromagnetic coupling of the Mn dopant ions, on the other hand, is only seen in Mn-doped BaTiO₃ thin films prepared under low oxygen partial pressure in a wide temperature range from 5 K to 300 K, and is attributed to the enhanced exchange coupling between Mn dopants and electrons at oxygen vacancies. Our results show that the leakage current is decreased with the doped Mn, but increases the dielectric loss and decreases the dielectric constant, and the ferroelectricity is impaired. To produce ferromagnetism, oxygen vacancies are necessary, which unfortunately increase the leakage current. This confirms that the mutual interplay between the ferroelectricity and ferromagnetism can be tuned by exchange coupling of the doped-Mn and oxygen vacancies in the BaTiO₃ thin films.

关键词: ferroelectricity, ferromagnetism, platinum-coated

Abstract:

Due to the fault of the first author of the article entitled “The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films”, published in Chinese Physics B, 2011, Vol. 20, Issue 12, Article No. 127701, has been found to copy from the article entitled “Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO3 thin films”, published in Journal of Applied Physics, 2011, Vol.109, Issue 8, article No. 084105. So the above article in Chinese Physics B has been withdrawn from the publication. [5 December 2011]

5-at% Mn-doped and undoped BaTiO₃ thin films have been grown under different oxygen partial pressures by Pulsed Laser Deposition (PLD) on platinum-coated sapphire substrates. X-ray diffraction (XRD) measurements for all the thin films reveal a similar polycrystalline single-phase perovskite structure. Ferroelectricity is observed in the Mn-doped and undoped BaTiO₃ thin films grown under relatively high oxygen partial pressure. Ferromagnetic coupling of the Mn dopant ions, on the other hand, is only seen in Mn-doped BaTiO₃ thin films prepared under low oxygen partial pressure in a wide temperature range from 5 K to 300 K, and is attributed to the enhanced exchange coupling between Mn dopants and electrons at oxygen vacancies. Our results show that the leakage current is decreased with the doped Mn, but increases the dielectric loss and decreases the dielectric constant, and the ferroelectricity is impaired. To produce ferromagnetism, oxygen vacancies are necessary, which unfortunately increase the leakage current. This confirms that the mutual interplay between the ferroelectricity and ferromagnetism can be tuned by exchange coupling of the doped-Mn and oxygen vacancies in the BaTiO₃ thin films.

Key words: ferroelectricity, ferromagnetism, platinum-coated

中图分类号: (Ferroelectricity and antiferroelectricity)

77.80.-e

75.50.Bb (Fe and its alloys) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)

丁斌峰, 周生强. The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO₃ thin films[J]. 中国物理B, 2011, 20(12): 127701-127701.

Ding Bin-Feng(丁斌峰) and Zhou Sheng-Qiang(周生强) . The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO₃ thin films[J]. Chin. Phys. B, 2011, 20(12): 127701-127701.

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The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO₃ thin films

The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO₃ thin films

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