中国物理B ›› 2020, Vol. 29 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/ab81ff

所属专题: SPECIAL TOPIC — Topological 2D materials

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Topology and ferroelectricity in group-V monolayers

Mutee Ur Rehman, Chenqiang Hua(华陈强), Yunhao Lu(陆赟豪)   

  1. 1 State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
    2 Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2019-12-31 修回日期:2020-02-19 出版日期:2020-05-05 发布日期:2020-05-05
  • 通讯作者: Yunhao Lu E-mail:luyh@zju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11974307 and 61574123), Zhejiang Provincial Natural Science Foundation, China (Grant No. D19A040001), the Fundamental Research Funds for the Central Universities of China, and the 2DMOST, Shenzhen University (Grant No. 2018028).

Topology and ferroelectricity in group-V monolayers

Mutee Ur Rehman1, Chenqiang Hua(华陈强)1,2, Yunhao Lu(陆赟豪)1,2   

  1. 1 State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
    2 Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
  • Received:2019-12-31 Revised:2020-02-19 Online:2020-05-05 Published:2020-05-05
  • Contact: Yunhao Lu E-mail:luyh@zju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11974307 and 61574123), Zhejiang Provincial Natural Science Foundation, China (Grant No. D19A040001), the Fundamental Research Funds for the Central Universities of China, and the 2DMOST, Shenzhen University (Grant No. 2018028).

摘要: The group-V monolayers (MLs) have been studied intensively after the experimental fabrication of two-dimensional (2D) graphene and black phosphorus. The observation of novel quantum phenomena, such as quantum spin Hall effect and ferroelectricity in group-V elemental layers, has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics in the 2D limit. In this review, we comprehensively review recent research progress in engineering of topology and ferroelectricity, and several effective methods to control the quantum phase transition are discussed. We then introduce the coupling between topological orders and ferroelectric orders. The research directions and outlooks are discussed at the end of the perspective. It is expected that the comprehensive overview of topology and ferroelectricity in 2D group-V materials can provide guidelines for researchers in the area and inspire further explorations of interplay between multiple quantum phenomena in low-dimensional systems.

关键词: topology, ferroelectricity, two-dimensional material, group-V element

Abstract: The group-V monolayers (MLs) have been studied intensively after the experimental fabrication of two-dimensional (2D) graphene and black phosphorus. The observation of novel quantum phenomena, such as quantum spin Hall effect and ferroelectricity in group-V elemental layers, has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics in the 2D limit. In this review, we comprehensively review recent research progress in engineering of topology and ferroelectricity, and several effective methods to control the quantum phase transition are discussed. We then introduce the coupling between topological orders and ferroelectric orders. The research directions and outlooks are discussed at the end of the perspective. It is expected that the comprehensive overview of topology and ferroelectricity in 2D group-V materials can provide guidelines for researchers in the area and inspire further explorations of interplay between multiple quantum phenomena in low-dimensional systems.

Key words: topology, ferroelectricity, two-dimensional material, group-V element

中图分类号:  (Quantum Hall effects)

  • 73.43.-f
77.80.-e (Ferroelectricity and antiferroelectricity) 03.65.-w (Quantum mechanics) 31.15.em (Corrections for core-spin polarization, surface effects, etc.)