Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO2 matrix

doi:10.1088/1674-1056/19/9/097806

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97806-097806.doi: 10.1088/1674-1056/19/9/097806

Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO₂ matrix

吴志永, 刘克新, 任晓堂

State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, Peking University, Beijing 100871, China

收稿日期:2010-01-04 修回日期:2010-04-26 出版日期:2010-09-15 发布日期:2010-09-15

Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO₂ matrix

Wu Zhi-Yong(吴志永)^†, Liu Ke-Xin(刘克新), and Ren Xiao-Tang(任晓堂)

State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, Peking University, Beijing 100871, China

Received:2010-01-04 Revised:2010-04-26 Online:2010-09-15 Published:2010-09-15

摘要/Abstract

摘要： Photoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation onto SiO₂ matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect (QCE) and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds (DBs) on Si NCs was also investigated. For hydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10¹⁷ ions /cm² is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.

Abstract: Photoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation onto SiO₂ matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect (QCE) and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds (DBs) on Si NCs was also investigated. For hydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10¹⁷ ions /cm² is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.

Key words: ion implantation, nanocrystals, photoluminescence, dangling bond

中图分类号:

7865

吴志永, 刘克新, 任晓堂. Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO₂ matrix[J]. 中国物理B, 2010, 19(9): 97806-097806.

Wu Zhi-Yong(吴志永), Liu Ke-Xin(刘克新), and Ren Xiao-Tang(任晓堂). Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO₂ matrix[J]. Chin. Phys. B, 2010, 19(9): 97806-097806.

参考文献 17

[1]	Canham L T 1990 wxAppl. Phys. Lett.57 1046
[2]	Lehmann V and Gõsele U 1991 wxAppl. Phys. Lett.58 856
[3]	Irrera A, Franzo G, Iacona F, Canino A, Stefano G Di, Sanfilippo D, Piana A, Fallica P G and Priolo F 2007 wxPhysica E38 181
[4]	Dal Negro L, Cazzanelli M, Daldosso N, Gaburro Z, Pavesi L, Priolo F, Pacifici D, Franzo G and Iacona F 2003 wxPhysica E16 297
[5]	Beaumont A and Souifi A 2009 wxSolid-State Electron.53 42
[6]	Iwayama T S and Kurumado N 1998 wxJ. Appl. Phys.83 11
[7]	Tong S, Liu X N, Wang L C, Yan F and Bao X M 1997 wxActa Phys. Sin.46 1217 (in Chinese)
[8]	Gautam D, Koyanag E and Uchino T 2009 wxJ. Appl. Phys.105 073517
[9]	Ding L, Chen T P, Liu Y, Yang M and Wong J I 2007 wxJ. Appl. Phys.101 103525
[10]	Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C 1999 wxPhys. Rev. Lett.82 1
[11]	Qin G G and Li Y J 2003 wxPhys. Rev. B68 085309
[12]	Eleonora L, Federico I, Rita M, Olivia P, Stefano O, Elena D and Valerio O 2007 wxPhys. Rev. B75 033303
[13]	Wang X X, Zhang J G, Ding L, Cheng B W, Ge W K, Yu J Z and Wang Q M 2005 wxPhys. Rev. B72 195313
[14]	Jung Y J and Yoon J H 2008 wxJ. Korean Phys. Soc.53 5
[15]	Rizza G C, Strobel M, Heinig K H and Bernas H 2001 wxNucl. Instr. and Meth. B178 78
[16]	Sychugov I, Juhasz R, Valenta J and Linnros J 2005 wxPhys. Rev. Lett.94 087405
[17]	Garrido B, Lopez M, Gonzalez O, Perez-Rodr'higuez A, Morante J R and Bonafos C 2000 wxAppl. Phys. Lett.77 3143

Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO₂ matrix

Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO₂ matrix

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