中国物理B ›› 2005, Vol. 14 ›› Issue (1): 218-222.doi: 10.1088/1009-1963/14/1/040

• • 上一篇    

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

张广军, 顾冬红, 干福熹   

  1. Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai,201800, China
  • 收稿日期:2004-05-21 修回日期:2004-09-06 出版日期:2005-01-20 发布日期:2005-01-20
  • 基金资助:
    Project supported by National Natural Science Foundation of China (Grant No 60207005)

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

Zhang Guang-Jun (张广军), Gu Dong-Hong (顾冬红), Gan Fu-Xi (干福熹)   

  1. Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • Received:2004-05-21 Revised:2004-09-06 Online:2005-01-20 Published:2005-01-20
  • Supported by:
    Project supported by National Natural Science Foundation of China (Grant No 60207005)

PDF (PC)

481

赞

摘要： A new composition content quaternary-alloy-based phase change thin film,Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200$^\circ$C for 30min, it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190$^\circ$C and increases with the heating rate.By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

关键词: thin films, phase change, Sb-rich AgInSbTe

Abstract: A new composition content quaternary-alloy-based phase change thin film,Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200$^\circ$C for 30min, it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190$^\circ$C and increases with the heating rate.By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

Key words: thin films, phase change, Sb-rich AgInSbTe

中图分类号: 

  • 7865K