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Chaoxin Huang(黄潮欣), Benyuan Cheng(程本源), Yunwei Zhang(张云蔚), Long Jiang(姜隆), Lisi Li(李历斯), Mengwu Huo(霍梦五), Hui Liu(刘晖), Xing Huang(黄星), Feixiang Liang(梁飞翔), Lan Chen(陈岚), Hualei Sun(孙华蕾), and Meng Wang(王猛). Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6[J]. 中国物理B, 2023, 32(3): 37802-037802. |
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Li-Cai Hao(郝礼才), Zi-Ang Chen(陈子昂), Dong-Yang Liu(刘东阳), Wei-Kang Zhao(赵伟康),Ming Zhang(张鸣), Kun Tang(汤琨), Shun-Ming Zhu(朱顺明), Jian-Dong Ye(叶建东),Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films[J]. 中国物理B, 2023, 32(3): 38101-038101. |
[3] |
Qin Wang(汪琴), Jie Zhang(张杰), Jierui Huang(黄杰瑞), Jinan Shi(时金安), Shuai Zhang(张帅), Hui Guo(郭辉), Li Huang(黄立), Hong Ding(丁洪), Wu Zhou(周武), Yan-Fang Zhang(张艳芳), Xiao Lin(林晓), Shixuan Du(杜世萱), and Hong-Jun Gao(高鸿钧). Fabrication of honeycomb AuTe monolayer with Dirac nodal line fermions[J]. 中国物理B, 2023, 32(1): 16102-016102. |
[4] |
Xiaolei Liu(刘晓磊), Zhenhai Yu(于振海), Jianfu Li(李建福), Zhenzhen Xu(徐真真), Chunyin Zhou(周春银), Zhaohui Dong(董朝辉), Lili Zhang(张丽丽), Xia Wang(王霞), Na Yu(余娜), Zhiqiang Zou(邹志强),Xiaoli Wang(王晓丽), and Yanfeng Guo(郭艳峰). A new transition metal diphosphide α-MoP2 synthesized by a high-temperature and high-pressure technique[J]. 中国物理B, 2023, 32(1): 18102-018102. |
[5] |
Kang-Wei Wang(王康伟), Meng-Wu Wu(吴孟武), Bing-Hui Tian(田冰辉), and Shou-Mei Xiong(熊守美). Numerical simulation on dendritic growth of Al-Cu alloy under convection based on the cellular automaton lattice Boltzmann method[J]. 中国物理B, 2022, 31(9): 98105-098105. |
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Yong Li(李勇), Xiaozhou Chen(陈孝洲), Maowu Ran(冉茂武), Yanchao She(佘彦超), Zhengguo Xiao(肖政国), Meihua Hu(胡美华), Ying Wang(王应), and Jun An(安军). Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond[J]. 中国物理B, 2022, 31(4): 46107-046107. |
[7] |
He-Ju Xu(许贺菊), Li-Tao Xin(辛利桃), Dong-Qiang Chen(陈东强), Ri-Dong Cong(丛日东), and Wei Yu(于威). Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells[J]. 中国物理B, 2022, 31(3): 38503-038503. |
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Zhen-Hua Li(李振华), Peng-Fei Shao(邵鹏飞), Gen-Jun Shi(施根俊), Yao-Zheng Wu(吴耀政), Zheng-Peng Wang(汪正鹏), Si-Qi Li(李思琦), Dong-Qi Zhang(张东祺), Tao Tao(陶涛), Qing-Jun Xu(徐庆君), Zi-Li Xie(谢自力), Jian-Dong Ye(叶建东), Dun-Jun Chen(陈敦军), Bin Liu(刘斌), Ke Wang(王科), You-Dou Zheng(郑有炓), and Rong Zhang(张荣). Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties[J]. 中国物理B, 2022, 31(1): 18102-018102. |
[9] |
Hao OuYang(欧阳豪), Qing-Xin Dong(董庆新), Yi-Fei Huang(黄奕飞), Jun-Sen Xiang(项俊森), Li-Bo Zhang(张黎博), Chen-Sheng Li(李晨圣), Pei-Jie Sun(孙培杰), Zhi-An Ren(任治安), and Gen-Fu Chen(陈根富). Electric and thermal transport properties of topological insulator candidate LiMgBi[J]. 中国物理B, 2021, 30(12): 127101-127101. |
[10] |
Heng-An Zhou(周恒安), Li Cai(蔡立), Teng Xu(许腾), Yonggang Zhao(赵永刚), and Wanjun Jiang(江万军). Optimized growth of compensated ferrimagnetic insulator Gd3Fe5O12 with a perpendicular magnetic anisotropy[J]. 中国物理B, 2021, 30(9): 97503-097503. |
[11] |
Wen Cui(崔雯), De-Jun Li(李德军), Jin-Liang Guo(郭金良), Lang-Huan Zhao(赵琅嬛), Bing-Bing Liu(刘冰冰), and Shi-Shuai Sun(孙士帅). Controllable preparation and disorder-dependent photoluminescence of morphologically different C60 microcrystals[J]. 中国物理B, 2021, 30(8): 86101-086101. |
[12] |
Rui Huang(黄瑞), Tian Lan(兰天), Chong Li(李冲), Jing Li(李景), and Zhiyong Wang(王智勇). Fabrication of GaAs/SiO2/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature[J]. 中国物理B, 2021, 30(7): 76802-076802. |
[13] |
Dai-Ni Wang(王黛妮), Shou-Lei Xu(徐守磊), Xiang-Yu Wang(王翔宇), Si-Yao Li(李思瑶), Xing Hong(洪杏), Bernard A. Goodman, and Wen Deng(邓文). Crystal growth, structure and optical properties of Pr3+-doped yttria-stabilized zirconia single crystals[J]. 中国物理B, 2021, 30(7): 78103-078103. |
[14] |
Shuang Sun(孙爽), Jian-Huan Wang(王建桓), Bao-Tong Zhang(张宝通), Xiao-Kang Li(李小康), Qi-Feng Cai(蔡其峰), Xia An(安霞), Xiao-Yan Xu(许晓燕), Jian-Jun Zhang(张建军), and Ming Li(黎明). Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology[J]. 中国物理B, 2021, 30(7): 78104-078104. |
[15] |
Kun Qian(钱昆), Yu Li(李渝), Jingnan Song(宋静楠), Jazib Ali, Ming Zhang(张明), Lei Zhu(朱磊), Hong Ding(丁虹), Junzhe Zhan(詹俊哲), and Wei Feng(冯威). Understanding the synergistic effect of mixed solvent annealing on perovskite film formation[J]. 中国物理B, 2021, 30(6): 68103-068103. |