Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

doi:10.1088/1674-1056/19/7/074216

中国物理B ›› 2010, Vol. 19 ›› Issue (7): 74216-074216.doi: 10.1088/1674-1056/19/7/074216

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

张云霄, 廖栽宜, 赵玲娟, 潘教青, 朱洪亮, 王圩

Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

出版日期:2010-07-15 发布日期:2010-07-15
基金资助:
Project supported by the National High Technology Research and Development of China (Grant Nos. 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417), the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604901and 2006CB604902), and the National Natural Science Foundation of China (Grant Nos. 90401025, 60736036, 60706009 and 60777021).

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

Zhang Yun-Xiao(张云霄)^†, Liao Zai-Yi(廖栽宜), Zhao Ling-Juan(赵玲娟), Pan Jiao-Qing(潘教青), Zhu Hong-Liang(朱洪亮), and Wang Wei(王圩)

Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Online:2010-07-15 Published:2010-07-15
Supported by:
Project supported by the National High Technology Research and Development of China (Grant Nos. 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417), the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604901and 2006CB604902), and the National Natural Science Foundation of China (Grant Nos. 90401025, 60736036, 60706009 and 60777021).

摘要/Abstract

摘要： We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Ω thin-film resistor and a bypass capacitor integrated on a chip.

Abstract: We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Ω thin-film resistor and a bypass capacitor integrated on a chip.

Key words: electroabsorption modulator, intra-step quantum wells, uni-traveling-carrier RF-gain

中图分类号: (Photodiodes; phototransistors; photoresistors)

85.60.Dw

42.79.Ta (Optical computers, logic elements, interconnects, switches; neural networks) 42.79.Hp (Optical processors, correlators, and modulators) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 84.32.Ff (Conductors, resistors (including thermistors, varistors, and photoresistors)) 84.32.Tt (Capacitors)

张云霄, 廖栽宜, 赵玲娟, 潘教青, 朱洪亮, 王圩. Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators[J]. 中国物理B, 2010, 19(7): 74216-074216.

Zhang Yun-Xiao(张云霄), Liao Zai-Yi(廖栽宜), Zhao Ling-Juan(赵玲娟), Pan Jiao-Qing(潘教青), Zhu Hong-Liang(朱洪亮), and Wang Wei(王圩). Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators[J]. Chin. Phys. B, 2010, 19(7): 74216-074216.

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Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

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