中国物理B ›› 2012, Vol. 21 ›› Issue (9): 98401-098401.doi: 10.1088/1674-1056/21/9/098401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Scaling properties of phase-change line memory

杜小锋, 宋三年, 宋志棠, 刘卫丽, 吕士龙, 顾怡峰, 薛维佳, 席韡   

  1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2011-12-31 修回日期:2012-04-18 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Key Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800), the National Natural Science Foundation of China (Grant Nos. 60906003, 60906004, 61006087, and 61076121), and the Science and Technology Council of Shanghai of China (Grant No. 1052nm07000).

Scaling properties of phase-change line memory

Du Xiao-Feng (杜小锋), Song San-Nian (宋三年), Song Zhi-Tang (宋志棠), Liu Wei-Li (刘卫丽), Lü Shi-Long (吕士龙), Gu Yi-Feng (顾怡峰), Xue Wei-Jia (薛维佳), Xi Wei (席韡)   

  1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2011-12-31 Revised:2012-04-18 Online:2012-08-01 Published:2012-08-01
  • Contact: Du Xiao-Feng E-mail:duxiaofeng@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Key Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800), the National Natural Science Foundation of China (Grant Nos. 60906003, 60906004, 61006087, and 61076121), and the Science and Technology Council of Shanghai of China (Grant No. 1052nm07000).

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摘要： Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V) and resistance-voltage (R-V) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

关键词: phase-change memory, line structure, scaling properties, three-dimensional simulation

Abstract: Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V) and resistance-voltage (R-V) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

Key words: phase-change memory, line structure, scaling properties, three-dimensional simulation

中图分类号:  (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

  • 84.37.+q
85.30.De (Semiconductor-device characterization, design, and modeling) 85.40.Hp (Lithography, masks and pattern transfer)