Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

doi:10.1088/1674-1056/19/4/047308

中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47308-047308.doi: 10.1088/1674-1056/19/4/047308

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

徐岭¹, 赵伟明¹, 丁宏林¹, 马忠元¹, 徐骏¹, 陈坤基¹, 李卫²

(1)National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; (2)National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

收稿日期:2009-03-19 修回日期:2009-07-20 出版日期:2010-04-15 发布日期:2010-04-15
基金资助:
Project supported by National Natural Science Foundation of China (Grant Nos.~10874070, 60976001, and 50872051), Natural Science Foundation of Jiangsu Province of China (Grant No.~BK2008253), State Key Program for Basic Research of China (Grant Nos.~2007C

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

Li Wei(李卫)^a)b), Xu Ling(徐岭)^a)†, Zhao Wei-Ming(赵伟明)^a), Ding Hong-Lin(丁宏林)^a), Ma Zhong-Yuan(马忠元)^a), Xu Jun(徐骏)^a), and Chen Kun-Ji(陈坤基)^a)

^a National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; ^bCollege of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

Received:2009-03-19 Revised:2009-07-20 Online:2010-04-15 Published:2010-04-15
Supported by:
Project supported by National Natural Science Foundation of China (Grant Nos.~10874070, 60976001, and 50872051), Natural Science Foundation of Jiangsu Province of China (Grant No.~BK2008253), State Key Program for Basic Research of China (Grant Nos.~2007C

摘要/Abstract

摘要： This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5~nm in diameter were clearly embedded in the SiO₂ layer on p-type Si (100). Capacitance--voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8~V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance--time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10$^{4}$~s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.

Abstract: This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO₂ layer on p-type Si (100). Capacitance--voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance--time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10$^{4}$ s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.

Key words: metal-oxide-semiconductor, capacitance--voltage, capacitance--time, Ni nanoparticles

中图分类号: (Capacitors)

84.32.Tt

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 81.15.Jj (Ion and electron beam-assisted deposition; ion plating) 85.35.-p (Nanoelectronic devices) 61.72.Cc (Kinetics of defect formation and annealing) 85.30.De (Semiconductor-device characterization, design, and modeling)

李卫, 徐岭, 赵伟明, 丁宏林, 马忠元, 徐骏, 陈坤基. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory[J]. 中国物理B, 2010, 19(4): 47308-047308.

Li Wei(李卫), Xu Ling(徐岭), Zhao Wei-Ming(赵伟明), Ding Hong-Lin(丁宏林), Ma Zhong-Yuan(马忠元), Xu Jun(徐骏), and Chen Kun-Ji(陈坤基). Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory[J]. Chin. Phys. B, 2010, 19(4): 47308-047308.

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Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

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