中国物理B ›› 2009, Vol. 18 ›› Issue (9): 3900-3904.doi: 10.1088/1674-1056/18/9/047

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High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time

徐学俊, 陈少武, 徐海华, 孙阳, 俞育德, 余金中, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2008-12-26 修回日期:2009-03-27 出版日期:2009-09-20 发布日期:2009-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60577044), the State Key Development Program for Basic Research of China (Grant No 2007CB613405) and the National High Technology Research and Development Program of China (Grant No 2006AA032424).

High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time

Xu Xue-Jun(徐学俊)†, Chen Shao-Wu(陈少武), Xu Hai-Hua (徐海华), Sun Yang(孙阳), Yu Yu-De(俞育德), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2008-12-26 Revised:2009-03-27 Online:2009-09-20 Published:2009-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60577044), the State Key Development Program for Basic Research of China (Grant No 2007CB613405) and the National High Technology Research and Development Program of China (Grant No 2006AA032424).

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摘要： A 2× 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach--Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1~mm in length and cross-section of 400~nm× 340~nm. The measurement results show that the switch has a VπLπ figure of merit of 0.145~V\cdot cm and the extinction ratios of two output ports and cross talk are 40~dB, 28~dB and -28~dB, respectively. A 3~dB modulation bandwidth of 90~MHz and a switch time of 6.8~ns for the rise edge and 2.7~ns for the fall edge are also demonstrated.

Abstract: A 2×2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach--Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm × 340 nm. The measurement results show that the switch has a $V_{\pi}L_{\pi}$ figure of merit of 0.145 V$\cdot$cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

Key words: silicon-on-insulator, electro-optic switch, plasma dispersion effect, switch time

中图分类号:  (Optical computers, logic elements, interconnects, switches; neural networks)

  • 42.79.Ta
42.79.Gn (Optical waveguides and couplers) 42.79.Hp (Optical processors, correlators, and modulators) 85.30.Kk (Junction diodes)