Sub-nanosecond optical switch based on silicon racetrack resonator

doi:10.1088/1674-1056/19/8/084210

中国物理B ›› 2010, Vol. 19 ›› Issue (8): 84210-084210.doi: 10.1088/1674-1056/19/8/084210

Sub-nanosecond optical switch based on silicon racetrack resonator

徐海华¹, 李运涛¹, 俞育德¹, 余金中¹, 黄庆忠²

(1)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2010-01-23 修回日期:2010-02-28 出版日期:2010-08-15 发布日期:2010-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60877036), the National Basic Research Program of China (Grant No. 2006CB302803), the State Key Laboratory of Advanced Optical Communication Systems and Networks, China (Grant No. 2008SH02), and the Knowledge Innovation Program of Institute of Semiconductors, Chinese Academy of Sciences (Grant No. ISCAS2008T10).

Sub-nanosecond optical switch based on silicon racetrack resonator

Xu Hai-Hua(徐海华)^a)†, Huang Qing-Zhong(黄庆忠)^b), Li Yun-Tao(李运涛)^a), Yu Yu-De(俞育德)^a), and Yu Jin-Zhong(余金中)^a)

^a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^b Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2010-01-23 Revised:2010-02-28 Online:2010-08-15 Published:2010-08-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60877036), the National Basic Research Program of China (Grant No. 2006CB302803), the State Key Laboratory of Advanced Optical Communication Systems and Networks, China (Grant No. 2008SH02), and the Knowledge Innovation Program of Institute of Semiconductors, Chinese Academy of Sciences (Grant No. ISCAS2008T10).

摘要/Abstract

摘要： We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2×10^-3 mm². Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.

Abstract: We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2×10^-3 mm². Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.

Key words: resonator, silicon-on-insulator, optical switch, pre-emphasis technique

中图分类号: (Optical computers, logic elements, interconnects, switches; neural networks)

42.79.Ta

42.79.Hp (Optical processors, correlators, and modulators) 42.82.Bq (Design and performance testing of integrated-optical systems)

徐海华, 黄庆忠, 李运涛, 俞育德, 余金中. Sub-nanosecond optical switch based on silicon racetrack resonator[J]. 中国物理B, 2010, 19(8): 84210-084210.

Xu Hai-Hua(徐海华), Huang Qing-Zhong(黄庆忠), Li Yun-Tao(李运涛), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中). Sub-nanosecond optical switch based on silicon racetrack resonator[J]. Chin. Phys. B, 2010, 19(8): 84210-084210.

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Sub-nanosecond optical switch based on silicon racetrack resonator

Sub-nanosecond optical switch based on silicon racetrack resonator

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