中国物理B ›› 2009, Vol. 18 ›› Issue (7): 2988-2991.doi: 10.1088/1674-1056/18/7/061
陈贵锋, 阎文博, 陈洪建, 崔会英, 李养贤
Chen Gui-Feng(陈贵锋), Yan Wen-Bo(阎文博), Chen Hong-Jian(陈洪建), Cui Hui-Ying(崔会英), and Li Yang-Xian(李养贤)†
摘要: This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5~MeV) at 360~K. Two groups of samples with low [Oi]=6.9× 1017~cm-3 and high [ Oi]=1.06× 1018~cm-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450~℃ and then dissapears at 500~℃, accompanied with the appearing of VO3. For both kinds of specimens, the concentration of VO3 reachs to maximum at 550~℃ and does not disappear completely at 600~℃.
中图分类号: (Electron and positron radiation effects)