中国物理B ›› 2009, Vol. 18 ›› Issue (7): 2988-2991.doi: 10.1088/1674-1056/18/7/061

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Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

陈贵锋, 阎文博, 陈洪建, 崔会英, 李养贤   

  1. School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
  • 收稿日期:2008-07-14 修回日期:2009-01-07 出版日期:2009-07-20 发布日期:2009-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50872028), Natural Science Foundation of Hebei Province of China (Grant Nos E200500048 and E2008000079) and Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20050080006).

Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

Chen Gui-Feng(陈贵锋), Yan Wen-Bo(阎文博), Chen Hong-Jian(陈洪建), Cui Hui-Ying(崔会英), and Li Yang-Xian(李养贤)†   

  1. School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
  • Received:2008-07-14 Revised:2009-01-07 Online:2009-07-20 Published:2009-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50872028), Natural Science Foundation of Hebei Province of China (Grant Nos E200500048 and E2008000079) and Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20050080006).

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摘要： This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5~MeV) at 360~K. Two groups of samples with low [Oi]=6.9× 1017~cm-3 and high [ Oi]=1.06× 1018~cm-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450~℃ and then dissapears at 500~℃, accompanied with the appearing of VO3. For both kinds of specimens, the concentration of VO3 reachs to maximum at 550~℃ and does not disappear completely at 600~℃.

Abstract: This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5 MeV) at 360 K. Two groups of samples with low [Oi]=6.9× 1017 cm-3 and high [ Oi]=1.06× 1018 cm-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃, accompanied with the appearing of VO3. For both kinds of specimens, the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.

Key words: electron irradiation, Cz-Si, defect complex, annealing processes

中图分类号:  (Electron and positron radiation effects)

  • 61.80.Fe
61.82.Fk (Semiconductors) 61.72.J- (Point defects and defect clusters) 78.30.Am (Elemental semiconductors and insulators) 61.72.Cc (Kinetics of defect formation and annealing)