A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

doi:10.1088/1674-1056/18/4/067

中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1679-1683.doi: 10.1088/1674-1056/18/4/067

A comparative study of YBa₂Cu₃O_7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

李洁¹, 陈莺飞¹, 李绍¹, 王佳¹, 郑东宁¹, 解廷月², 王萍³

(1)National Laboratory for Superconductivity, Institute of Physics {& Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)School of Physics and Electronics Science, Shanxi Datong University, Datong 037009, China; (3)School of Physics and Electronics Science, Shanxi Datong University, Datong 037009, China;National Laboratory for Superconductivity, Institute of Physics {& Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100

收稿日期:2008-11-24 修回日期:2008-12-18 出版日期:2009-04-20 发布日期:2009-04-20
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos 50672125 and 10574154), the Natural Science Foundation of Shanxi Province, China (Grant No 2009011003-1), and the Youth Foundation of Shanxi Datong University, China (Grant N

A comparative study of YBa₂Cu₃O_7-$\delta$/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

Wang Ping(王萍)^a)b), Li Jie(李洁)^b), Chen Ying-Fei(陈莺飞)^b), Li Shao(李绍)^b), Wang Jia(王佳)^b), Xie Ting-Yue(解廷月)^a), and Zheng Dong-Ning(郑东宁)^b)^†

^a School of Physics and Electronics Science, Shanxi Datong University, Datong 037009, China; ^b National Laboratory for Superconductivity, Institute of Physics & Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2008-11-24 Revised:2008-12-18 Online:2009-04-20 Published:2009-04-20
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos 50672125 and 10574154), the Natural Science Foundation of Shanxi Province, China (Grant No 2009011003-1), and the Youth Foundation of Shanxi Datong University, China (Grant N

摘要/Abstract

摘要： Highly epitaxial YBa₂Cu₃O_{7 - δ} (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO₂ layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO₂ layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.

关键词: pulsed laser deposition, thin film, pretreatment, SOI substrate

Abstract: Highly epitaxial YBa₂Cu₃O_7-$\delta$ (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO₂ layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO₂ layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.

Key words: pulsed laser deposition, thin film, pretreatment, SOI substrate

中图分类号:

74.78.Bz

81.15.Fg (Pulsed laser ablation deposition) 74.25.Ld (Mechanical and acoustical properties, elasticity, and ultrasonic Attenuation) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))

引用本文

王萍, 李洁, 陈莺飞, 李绍, 王佳, 解廷月, 郑东宁. A comparative study of YBa₂Cu₃O_7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment[J]. 中国物理B, 2009, 18(4): 1679-1683.

Wang Ping(王萍), Li Jie(李洁), Chen Ying-Fei(陈莺飞), Li Shao(李绍), Wang Jia(王佳), Xie Ting-Yue(解廷月), and Zheng Dong-Ning(郑东宁). A comparative study of YBa₂Cu₃O_7-$\delta$/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment[J]. Chin. Phys. B, 2009, 18(4): 1679-1683.

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A comparative study of YBa₂Cu₃O_7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

A comparative study of YBa₂Cu₃O_7-$\delta$/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

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[1]	汪翔, 葛琛, 李格, 郭尔佳, 何萌, 王灿, 杨国桢, 金奎娟. A synaptic transistor with NdNiO₃[J]. 中国物理B, 2020, 29(9): 98101-098101.
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[4]	吕有明, 李超, 陈相和, 韩瞬, 曹培江, 贾芳, 曾玉祥, 刘新科, 许望颖, 柳文军, 朱德亮. Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition[J]. 中国物理B, 2019, 28(1): 18504-018504.
[5]	王威, 沈鸿烈, 金佳乐, 李金泽, 马跃. Effect of thermal pretreatment of metal precursor on the properties of Cu₂ZnSnS₄ films[J]. 中国物理B, 2015, 24(5): 56805-056805.
[6]	宓珉瀚, 张凯, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃. Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment[J]. , 2015, 24(2): 27303-027303.
[7]	李璐, 闫培光, 王勇刚, 段利娜, 孙航, 司金海. Yb-doped passively mode-locked fiber laser with Bi₂Te₃-deposited[J]. 中国物理B, 2015, 24(12): 124204-124204.
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[11]	陈珊珊, 王淑芳, 刘富强, 闫国英, 陈景春, 王江龙, 于威, 傅广生 . High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition[J]. 中国物理B, 2012, 21(8): 87306-087306.
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[13]	陈香存, 周解平, 王海洋, 徐彭寿, 潘国强. boldmath In situ high temperature X-ray diffraction studies of ZnO thin film[J]. 中国物理B, 2011, 20(9): 96102-096102.
[14]	冯倩, 田园, 毕志伟, 岳远征, 倪金玉, 进成, 郝跃, 杨林安. The improvement of Al₂O₃/AlGaN/GaN MISHEMT performance by N₂ plasma pretreatment[J]. 中国物理B, 2009, 18(7): 3014-3017.
[15]	王淑芳, 赵嵩卿, 刘震, 周岳亮, 陈正豪, 吕惠宾, 金奎娟, 程波林, 杨国桢. Deposition and characterization of YBCO/CeO₂/YSZ/CeO₂ multilayers on biaxially textured Ni substrates[J]. 中国物理B, 2006, 15(2): 444-448.