中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1637-1642.doi: 10.1088/1674-1056/18/4/059

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Raman scattering studies on manganese ion-implanted GaN

徐大庆, 张义门, 张玉明, 李培咸, 王超   

  1. Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2008-10-07 修回日期:2008-11-05 出版日期:2009-04-20 发布日期:2009-04-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 90407014).

Raman scattering studies on manganese ion-implanted GaN

Xu Da-Qing(徐大庆)†, Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Li Pei-Xian(李培咸), and Wang Chao(王超)   

  1. Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2008-10-07 Revised:2008-11-05 Online:2009-04-20 Published:2009-04-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 90407014).

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摘要： This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm-1 and 660 cm-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A1(LO) (733 cm-1) and EH2 (566 cm-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.

关键词: diluted magnetic semiconductors, gallium nitride, implantation, Raman spectroscopy

Abstract: This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm-1 and 660 cm-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A1(LO) (733 cm-1) and EH2 (566 cm-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.

Key words: diluted magnetic semiconductors, gallium nitride, implantation, Raman spectroscopy

中图分类号:  (III-V and II-VI semiconductors)

  • 78.30.Fs
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 75.50.Pp (Magnetic semiconductors) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 75.70.Ak (Magnetic properties of monolayers and thin films) 78.66.Fd (III-V semiconductors)