中国物理B ›› 2009, Vol. 18 ›› Issue (2): 664-670.doi: 10.1088/1674-1056/18/2/045

• • 上一篇    下一篇

Fast pore etching on high resistivity n-type silicon via photoelectrochemistry

周萍1, 焦继伟1, 王跃林1, 包晓清2, 葛道晗2, 张圣2, 李金鹏2   

  1. (1)State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; (2)State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of Chinese Academy of Sciences, Be
  • 收稿日期:2008-05-14 修回日期:2008-09-10 出版日期:2009-02-20 发布日期:2009-02-20
  • 基金资助:
    Project supported by Chinese National `863' Project (Grant No 2006AA04Z312) and `973' Project (Grant No 2006CB300403) and the National Natural Science Foundation of China (Grant No 60772030).

Fast pore etching on high resistivity n-type silicon via photoelectrochemistry

Bao Xiao-Qing(包晓清)a)b), Ge Dao-Han(葛道晗)a)b), Zhang Sheng(张圣)a)b), Li Jin-Peng(李金鹏)a)b), Zhou Ping(周萍)a), Jiao Ji-Wei(焦继伟)a)†, and Wang Yue-Lin(王跃林)a)   

  1. a State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; b Graduate School of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2008-05-14 Revised:2008-09-10 Online:2009-02-20 Published:2009-02-20
  • Supported by:
    Project supported by Chinese National `863' Project (Grant No 2006AA04Z312) and `973' Project (Grant No 2006CB300403) and the National Natural Science Foundation of China (Grant No 60772030).

PDF (PC)

513

赞

摘要： In this paper, five factors, namely the HF (hydrofluoric acid) concentration, field strength, illumination intensity as well as the oxidizing-power and conductivity of electrolytes were found to strongly affect the fast pore etching. The oxidizing power of aqueous HF electrolyte of different concentrations was especially measured and analysed. A positive correlation between optimal bias and HF concentration was generally observed and the relationship was semi-quantitatively interpreted. Pore density notably increased with enhanced HF-concentration or bias even on patterned substrates where 2D (two-dimensional) nuclei were densely pre-textured. The etch rate can reach 400μm/h and the aspect ratio of pores can be readily driven up to 250.

关键词: pore density, SCR width, H-passivation, current-burst-model, breakdown mechanism

Abstract: In this paper, five factors, namely the HF (hydrofluoric acid) concentration, field strength, illumination intensity as well as the oxidizing-power and conductivity of electrolytes were found to strongly affect the fast pore etching. The oxidizing power of aqueous HF electrolyte of different concentrations was especially measured and analysed. A positive correlation between optimal bias and HF concentration was generally observed and the relationship was semi-quantitatively interpreted. Pore density notably increased with enhanced HF-concentration or bias even on patterned substrates where 2D (two-dimensional) nuclei were densely pre-textured. The etch rate can reach 400μm/h and the aspect ratio of pores can be readily driven up to 250.

Key words: pore density, SCR width, H-passivation, current-burst-model, breakdown mechanism

中图分类号:  (Surface cleaning, etching, patterning)

  • 81.65.Cf
82.45.Vp (Semiconductor materials in electrochemistry) 82.50.-m (Photochemistry) 82.45.Gj (Electrolytes) 81.65.Mq (Oxidation)