Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
包晓清, 葛道晗, 张圣, 李金鹏, 周萍, 焦继伟, 王跃林
Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
Bao Xiao-Qing(包晓清), Ge Dao-Han(葛道晗), Zhang Sheng(张圣), Li Jin-Peng(李金鹏), Zhou Ping(周萍), Jiao Ji-Wei(焦继伟), and Wang Yue-Lin(王跃林)
中国物理B
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2009, (2): 664
-670
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DOI: 10.1088/1674-1056/18/2/045