中国物理B ›› 2016, Vol. 25 ›› Issue (10): 106701-106701.doi: 10.1088/1674-1056/25/10/106701

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films

Xiao-Min Gu(顾晓敏), Wei Wang(王伟), Guo-Tai Zhou(周国泰), Kai-Ge Gao(高凯歌), Hong-Ling Cai(蔡宏灵), Feng-Ming Zhang(张凤鸣), Xiao-Shan Wu(吴小山)   

  1. 1 Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center, School of Physics, Nanjing University, Nanjing 210093, China;
    2 Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2016-03-24 修回日期:2016-05-25 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Xiao-Shan Wu E-mail:xswu@nju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. U1332205, 11274153, 11204124, and 51202108).

Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films

Xiao-Min Gu(顾晓敏)1, Wei Wang(王伟)2, Guo-Tai Zhou(周国泰)1, Kai-Ge Gao(高凯歌)1, Hong-Ling Cai(蔡宏灵)1, Feng-Ming Zhang(张凤鸣)1, Xiao-Shan Wu(吴小山)1   

  1. 1 Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center, School of Physics, Nanjing University, Nanjing 210093, China;
    2 Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • Received:2016-03-24 Revised:2016-05-25 Online:2016-10-05 Published:2016-10-05
  • Contact: Xiao-Shan Wu E-mail:xswu@nju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. U1332205, 11274153, 11204124, and 51202108).

摘要: La2/3Sr1/3MnO3 films are deposited on (001) silicon substrates, in which the silicon surfaces have artificially been treated into the scallops-like, pyramid-like, and smooth polishing structure, by pulsed laser deposition. The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field, and much larger (14.3% for acid-etched, and 42.9% for alkali-etched) than that on the polished Si at 5 K. Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed. Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature, which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law. We believe that the rough surface may be useful in device design.

关键词: La2/3Sr1/3MnO3 film, silicon, microstructure, magnetoresistance

Abstract: La2/3Sr1/3MnO3 films are deposited on (001) silicon substrates, in which the silicon surfaces have artificially been treated into the scallops-like, pyramid-like, and smooth polishing structure, by pulsed laser deposition. The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field, and much larger (14.3% for acid-etched, and 42.9% for alkali-etched) than that on the polished Si at 5 K. Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed. Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature, which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law. We believe that the rough surface may be useful in device design.

Key words: La2/3Sr1/3MnO3 film, silicon, microstructure, magnetoresistance

中图分类号:  (Films)

  • 67.25.dp
73.43.Qt (Magnetoresistance) 77.55.df (For silicon electronics) 81.65.Cf (Surface cleaning, etching, patterning)