中国物理B ›› 2008, Vol. 17 ›› Issue (8): 3108-3114.doi: 10.1088/1674-1056/17/8/057

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Studies of diamond-like carbon (DLC) films deposited on stainless steel substrate with Si/SiC intermediate layers

王 静1, 刘贵昌1, 王立达1, 邓新绿2, 徐 军2   

  1. (1)School of Chemical Engineering, Dalian University of Technology, Dalian 116012, China; (2)State Key Laboratory of Surface Modification by Laser, Ion and Electronic Beams, \Dalian University of Technology, Dalian 116012, China
  • 收稿日期:2007-09-22 修回日期:2007-11-19 出版日期:2008-08-20 发布日期:2008-08-20

Studies of diamond-like carbon (DLC) films deposited on stainless steel substrate with Si/SiC intermediate layers

Wang Jing(王静)a)†, Liu Gui-Chang(刘贵昌)a), Wang Li-Da(王立达)a), Deng Xin-Lü(邓新绿)b), and Xu Jun(徐军)b)   

  1. a School of Chemical Engineering, Dalian University of Technology, Dalian 116012, China; b State Key Laboratory of Surface Modification by Laser, Ion and Electronic Beams, Dalian University of Technology, Dalian 116012, China
  • Received:2007-09-22 Revised:2007-11-19 Online:2008-08-20 Published:2008-08-20

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摘要： In this work, diamond-like carbon (DLC) films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition (MW-ECRPECVD) techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy (AFM). With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio $I_{D}$/$I_{G}$ increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp$^{3}$-bond carbon density reducing, resulted in the peak values of hardness ($H$) and elastic modulus ($E$). Silicon addition promoted the formation of sp$^{3}$ bonding and reduced the hardness. The incorporated Si atoms substituted sp$^{2}$- bond carbon atoms in ring structures, which promoted the formation of sp$^{3}$-bond. The structural transition from C--C to C--Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.

关键词: diamond-like carbon (DLC), stainless steel substrate, intermediate layers

Abstract: In this work, diamond-like carbon (DLC) films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition (MW-ECRPECVD) techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy (AFM). With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio $I_{D}$/$I_{G}$ increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp$^{3}$-bond carbon density reducing, resulted in the peak values of hardness ($H$) and elastic modulus ($E$). Silicon addition promoted the formation of sp$^{3}$ bonding and reduced the hardness. The incorporated Si atoms substituted sp$^{2}$- bond carbon atoms in ring structures, which promoted the formation of sp$^{3}$-bond. The structural transition from C--C to C--Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.

Key words: diamond-like carbon (DLC), stainless steel substrate, intermediate layers

中图分类号:  (Mechanical and acoustical properties)

  • 68.60.Bs
52.77.Dq (Plasma-based ion implantation and deposition) 62.20.Qp (Friction, tribology, and hardness) 68.55.-a (Thin film structure and morphology) 78.30.Hv (Other nonmetallic inorganics) 81.40.Np (Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure)