中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2184-2190.doi: 10.1088/1674-1056/17/6/041

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Synthesis and characterization of axially periodic Zn2SnO4 dendritic nanostructures

向彦娟1, 王超英1, 王刚1, 周维亚1, 沈俊2, 葛炳辉2, 罗述东2, 张增星2, 刘东方2, 刘利峰2, 马文君2, 任彦2, 褚卫国3   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Graduate School of the Chinese Academy of Sciences, Beijing 100039, China; (3)National Center for Nanoscience and Nanotechnology, Beijing 100190, China
  • 收稿日期:2007-12-04 修回日期:2008-01-04 出版日期:2008-06-20 发布日期:2008-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10334060 and 90406022) and the National Basic Research Program of China (Grant No 2005CB623602).

Synthesis and characterization of axially periodic Zn2SnO4 dendritic nanostructures

Shen Jun(沈俊)a)b), Ge Bing-Hui(葛炳辉)a)b), Chu Wei-Guo(褚卫国)c), Luo Shu-Dong(罗述东)a)b), Zhang Zeng-Xing(张增星)a)b), Liu Dong-Fang(刘东方)a)b), Liu Li-Feng(刘利峰)a)b), Ma Wen-Jun(马文君)a)b), Ren Yan(任彦)a)b), Xiang Yan-Juan(向彦娟)a)b), Wang Chao-Ying(王超英)a), Wang Gang(王刚)a), and Zhou Wei-Ya(周维亚)a)†   

  1. a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; b Graduate School of the Chinese Academy of Sciences, Beijing 100039, China; c National Center for Nanoscience and Nanotechnology, Beijing 100190, China
  • Received:2007-12-04 Revised:2008-01-04 Online:2008-06-20 Published:2008-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10334060 and 90406022) and the National Basic Research Program of China (Grant No 2005CB623602).

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摘要： Zn2SnO4 (ZTO) nanowires with a unique dendritic nanostructure were synthesized via a simple one-step thermal evaporation and condensation process. The morphology and microstructure of the ZTO nanodendrite have been investigated by means of field emission scanning electron microscopy (SEM), x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). SEM observation revealed the formation of branched nanostructures and showed that each branch exhibited a unique periodic structure formed by a row of overlaid rhombohedra of ZTO nanocrystals along the axis of the nanobranch. HRTEM studies displayed that the branches grew homoepitaxially as single-crystalline nanowires from the ZTO nanowire backbone. A possible growth model of the branched ZTO nanowires is discussed. To successfully prepare branched structures would provide an opportunity for both fundamental research and practical applications, such as three-dimensional nanoelectronics, and opto-electronic nanodevices.

关键词: Zn2SnO4, epitaxial growth, dendrite, photoluminescence

Abstract: Zn2SnO4 (ZTO) nanowires with a unique dendritic nanostructure were synthesized via a simple one-step thermal evaporation and condensation process. The morphology and microstructure of the ZTO nanodendrite have been investigated by means of field emission scanning electron microscopy (SEM), x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). SEM observation revealed the formation of branched nanostructures and showed that each branch exhibited a unique periodic structure formed by a row of overlaid rhombohedra of ZTO nanocrystals along the axis of the nanobranch. HRTEM studies displayed that the branches grew homoepitaxially as single-crystalline nanowires from the ZTO nanowire backbone. A possible growth model of the branched ZTO nanowires is discussed. To successfully prepare branched structures would provide an opportunity for both fundamental research and practical applications, such as three-dimensional nanoelectronics, and opto-electronic nanodevices.

Key words: Zn2SnO4, epitaxial growth, dendrite, photoluminescence

中图分类号:  (Methods of micro- and nanofabrication and processing)

  • 81.16.-c
68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.37.Lp (Transmission electron microscopy (TEM)) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 78.55.Hx (Other solid inorganic materials) 81.07.Bc (Nanocrystalline materials)