中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1274-1279.doi: 10.1088/1674-1056/17/4/021
章蓓1, 代涛1, 张国义1, 靳晓民2
Jin Xiao-Ming(靳晓民)a)b)†, Zhang Bei(章蓓)a)‡,Dai Tao(代涛)a), and Zhang Guo-Yi(张国义)a)
摘要: We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 $\mu $m thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5$^{\rm th}$ order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlattice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.
中图分类号: (Semiconductor lasers; laser diodes)