中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1274-1279.doi: 10.1088/1674-1056/17/4/021

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Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode

章蓓1, 代涛1, 张国义1, 靳晓民2   

  1. (1)School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871, China; (2)School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871, China;Electrical Engineering Department, California Polytechnic State University, San Luis Obispo, CA 93407, USA
  • 收稿日期:2007-03-08 修回日期:2007-10-29 出版日期:2008-04-20 发布日期:2008-04-20
  • 基金资助:
    Project supported by the Wang Faculty Fellowship at Peking University, Beijing, China, 2006-2007 through California State University (CSU) International Programs USA; the National Basic Research Program of China (Grant No 2007CB307004), the National High

Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode

Jin Xiao-Ming(靳晓民)a)b)†, Zhang Bei(章蓓)a)‡,Dai Tao(代涛)a), and Zhang Guo-Yi(张国义)a)   

  1. a School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871, China; b Electrical Engineering Department, California Polytechnic State University, San Luis Obispo, CA 93407, USA
  • Received:2007-03-08 Revised:2007-10-29 Online:2008-04-20 Published:2008-04-20
  • Supported by:
    Project supported by the Wang Faculty Fellowship at Peking University, Beijing, China, 2006-2007 through California State University (CSU) International Programs USA; the National Basic Research Program of China (Grant No 2007CB307004), the National High

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摘要： We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 $\mu $m thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5$^{\rm th}$ order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlattice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.

关键词: GaN laser, optical mode coupling, optical confinement factor

Abstract: We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 $\mu $m thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5$^{\rm th}$ order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlattice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.

Key words: GaN laser, optical mode coupling, optical confinement factor

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.By (Design of specific laser systems) 73.21.Ac (Multilayers) 73.21.Cd (Superlattices)