中国物理B ›› 2008, Vol. 17 ›› Issue (2): 716-720.doi: 10.1088/1674-1056/17/2/059

• • 上一篇    下一篇

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

顾广瑞1, 吴宝嘉1, 金 哲1, Ito Toshimichi2   

  1. (1)Department of Physics, College of Science,Yanbian University, Yanji 133002, China; (2)Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
  • 收稿日期:2007-04-22 修回日期:2007-06-25 出版日期:2008-02-20 发布日期:2008-02-20

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

Gu Guang-Rui(顾广瑞)a)†, Wu Bao-Jia(吴宝嘉)a), Jin Zhe(金哲)a), and Ito Toshimichib)   

  1. a Department of Physics, College of Science,Yanbian University, Yanji 133002, China; b Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
  • Received:2007-04-22 Revised:2007-06-25 Online:2008-02-20 Published:2008-02-20

PDF (PC)

550

赞

摘要： This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/$\mu $m corresponding to a current density of about 1$\mu $A/cm$^{2}$ and a current density of 3.2mA/cm$^{2}$ at an electric field of 10V/$\mu $m were obtained from the carbon film deposited at CH$_{4}$ concentration of 8{\%}. The mechanism that the threshold field decreased with the increase of the CH$_{4}$ concentration and the high emission current appeared at the high CH$_{4}$ concentration was explained by using the Fowler--Nordheim theory.

关键词: field emission, carbon films, nano-catkin, microwave plasma chemical vapour deposition

Abstract: This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/$\mu $m corresponding to a current density of about 1$\mu $A/cm$^{2}$ and a current density of 3.2mA/cm$^{2}$ at an electric field of 10V/$\mu $m were obtained from the carbon film deposited at CH$_{4}$ concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH$_{4}$ concentration and the high emission current appeared at the high CH$_{4}$ concentration was explained by using the Fowler--Nordheim theory.

Key words: field emission, carbon films, nano-catkin, microwave plasma chemical vapour deposition

中图分类号:  (Field emission, ionization, evaporation, and desorption)

  • 79.70.+q
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 68.55.-a (Thin film structure and morphology) 78.30.Hv (Other nonmetallic inorganics) 78.66.-w (Optical properties of specific thin films) 78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)