中国物理B ›› 2006, Vol. 15 ›› Issue (9): 2170-2174.doi: 10.1088/1009-1963/15/9/044

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Electrical and structural properties of diamond films implanted by various doses of oxygen ions

胡晓君1, 郑国渠1, 曹华珍1, 谭红川1, 叶健松2   

  1. (1)College of Chemical Engineering and Material Science,Zhejiang University of Technology, Hangzhou 310014, China; (2)Hangzhou Iron and Steel Group Corporation, Hangzhou 310022, China
  • 收稿日期:2006-01-14 修回日期:2006-06-02 出版日期:2006-09-20 发布日期:2006-09-20
  • 基金资助:
    Project supported by the Research Foundation of Education Bureau of Zhejiang province, China (Grant No 20050227).

Electrical and structural properties of diamond films implanted by various doses of oxygen ions

Hu Xiao-Jun(胡晓君)a)†, Ye Jian-Song(叶健松)b), Zheng Guo-Qu(郑国渠)a), Cao Hua-Zhen(曹华珍)a), and Tan Hong-Chuan(谭红川)a)   

  1. a College of Chemical Engineering and Material Science,Zhejiang University of Technology, Hangzhou 310014, China; b Hangzhou Iron and Steel Group Corporation, Hangzhou 310022, China
  • Received:2006-01-14 Revised:2006-06-02 Online:2006-09-20 Published:2006-09-20
  • Supported by:
    Project supported by the Research Foundation of Education Bureau of Zhejiang province, China (Grant No 20050227).

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摘要： Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 1014cm-2 or 1015cm-2 is favourable for producing less damaged O-doped diamond films.

Abstract: Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 1014cm-2 or 1015cm-2 is favourable for producing less damaged O-doped diamond films.

Key words: diamond films, n-type, oxygen, ion implantation

中图分类号:  (Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)

  • 65.60.+a
78.55.Qr (Amorphous materials; glasses and other disordered solids) 63.50.-x (Vibrational states in disordered systems) 78.45.+h (Stimulated emission)