中国物理B ›› 2006, Vol. 15 ›› Issue (9): 2165-2169.doi: 10.1088/1009-1963/15/9/043

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Annealing behaviour of structure and morphology and its effects on the optical gain of Er3+/Yb3+ co-doped Al2O3 planar waveguide amplifier

谭娜, 张庆瑜   

  1. State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,Dalian University of Technology, Dalian 116024, China
  • 收稿日期:2005-11-07 修回日期:2006-03-23 出版日期:2006-09-20 发布日期:2006-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50240420656).

Annealing behaviour of structure and morphology and its effects on the optical gain of Er3+/Yb3+ co-doped Al2O3 planar waveguide amplifier

Tan Na(谭娜) and Zhang Qing-Yu(张庆瑜)†   

  1. State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,Dalian University of Technology, Dalian 116024, China
  • Received:2005-11-07 Revised:2006-03-23 Online:2006-09-20 Published:2006-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50240420656).

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摘要： Using transmission electron microscopy (TEM) and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped Al2O3 films in the temperature range from $600\,^{\circ}\mkern-1mu$C--900$\,^{\circ}\mkern-1mu$C. By comparison with TEM observation, the annealing behaviours of photoluminescence (PL) emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800$\,^{\circ}\mkern-1mu$C might result from the crystallization of amorphous Al2O3 films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al2O3 planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al2O3 planar waveguide amplifier.

Abstract: Using transmission electron microscopy (TEM) and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped Al2O3 films in the temperature range from $600\,^{\circ}\mkern-1mu$C--900$\,^{\circ}\mkern-1mu$C. By comparison with TEM observation, the annealing behaviours of photoluminescence (PL) emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800$\,^{\circ}\mkern-1mu$C might result from the crystallization of amorphous Al2O3 films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al2O3 planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al2O3 planar waveguide amplifier.

Key words: Er-doped waveguide amplifier, annealing behaviour, structural characterization, optical gain

中图分类号:  (Excitons in magnetic fields; magnetoexcitons)

  • 71.35.Ji
71.70.Di (Landau levels) 78.20.Bh (Theory, models, and numerical simulation)