中国物理B ›› 2006, Vol. 15 ›› Issue (5): 1114-1119.doi: 10.1088/1009-1963/15/5/042
• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
梁松, 朱洪亮, 潘教青, 王圩
Liang Song (梁松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Wang Wei (王圩)
摘要: Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.
中图分类号: (Quantum dots)