中国物理B ›› 2006, Vol. 15 ›› Issue (5): 1114-1119.doi: 10.1088/1009-1963/15/5/042

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

梁松, 朱洪亮, 潘教青, 王圩   

  1. National Research Center of Optoelectronic Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2005-10-26 修回日期:2006-02-15 出版日期:2006-05-20 发布日期:2006-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60476009).

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

Liang Song (梁松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Wang Wei (王圩)   

  1. National Research Center of Optoelectronic Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • Received:2005-10-26 Revised:2006-02-15 Online:2006-05-20 Published:2006-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60476009).

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摘要： Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.

Abstract: Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.

Key words: self-assembled quantum dots, indium arsenide, bimodal size distribution, MOCVD

中图分类号:  (Quantum dots)

  • 78.67.Hc
68.47.Fg (Semiconductor surfaces) 68.65.Hb (Quantum dots (patterned in quantum wells)) 78.55.Cr (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))