中国物理B ›› 2006, Vol. 15 ›› Issue (4): 807-812.doi: 10.1088/1009-1963/15/4/023

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Simulation of multilayer homoepitaxial growth on Cu (100) surface

吴自勤1, 吴锋民2, 陆杭军2   

  1. (1)Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China; (2)Institute of Condensed Matter Physics, Zhejiang Normal University,Jinhua 321004, China
  • 收稿日期:2005-11-22 修回日期:2005-12-27 出版日期:2006-04-20 发布日期:2006-04-20
  • 基金资助:
    Project supported by the Natural Science Foundation for Young Scientists of Zhejiang Province, China (Grant No RC02069).

Simulation of multilayer homoepitaxial growth on Cu (100) surface

Wu Feng-Min (吴锋民)a, Lu Hang-Jun (陆杭军)a, Wu Zi-Qin (吴自勤)b    

  1. a Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China; b Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2005-11-22 Revised:2005-12-27 Online:2006-04-20 Published:2006-04-20
  • Supported by:
    Project supported by the Natural Science Foundation for Young Scientists of Zhejiang Province, China (Grant No RC02069).

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摘要： The processes of multilayer thin Cu films grown on Cu (100) surfaces at elevated temperature (250--400\,K) are simulated by mean of kinetic Monte Carlo (KMC) method, where the realistic growth model and physical parameters are used. The effects of small island (dimer and trimer) diffusion, edge diffusion along the islands, exchange of the adatom with an atom in the existing island, as well as mass transport between interlayers are included in the simulation model. Emphasis is placed on revealing the influence of the Ehrlich--Schwoebel (ES) barrier on growth mode and morphology during multilayer thin film growth. We present numerical evidence that the ES barrier does exist for the Cu/Cu(100) system and an ES barrier $E_{\rm B} >0.125$\,eV is estimated from a comparison of the KMC simulation with the realistic experimental images. The transitions of growth modes with growth conditions and the influence of exchange barrier on growth mode are also investigated.

关键词: growth mode, ES barrier, multilayer growth, kinetic Monte Carlo simulation

Abstract: The processes of multilayer thin Cu films grown on Cu (100) surfaces at elevated temperature (250--400\,K) are simulated by mean of kinetic Monte Carlo (KMC) method, where the realistic growth model and physical parameters are used. The effects of small island (dimer and trimer) diffusion, edge diffusion along the islands, exchange of the adatom with an atom in the existing island, as well as mass transport between interlayers are included in the simulation model. Emphasis is placed on revealing the influence of the Ehrlich--Schwoebel (ES) barrier on growth mode and morphology during multilayer thin film growth. We present numerical evidence that the ES barrier does exist for the Cu/Cu(100) system and an ES barrier $E_{\rm B} >0.125$ eV is estimated from a comparison of the KMC simulation with the realistic experimental images. The transitions of growth modes with growth conditions and the influence of exchange barrier on growth mode are also investigated.

Key words: growth mode, ES barrier, multilayer growth, kinetic Monte Carlo simulation

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.35.Ct (Interface structure and roughness) 68.35.Fx (Diffusion; interface formation) 68.43.Mn (Adsorption kinetics ?) 68.47.De (Metallic surfaces) 81.15.Aa (Theory and models of film growth)