Fabrication and photoluminescence characteristics of In2O3 nanohillocks

doi:10.1088/1674-1056/20/11/118102

中国物理B ›› 2011, Vol. 20 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/20/11/118102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Fabrication and photoluminescence characteristics of In₂O₃ nanohillocks

魏合林, 张磊, 刘祖黎, 姚凯伦

Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2010-07-27 修回日期:2011-06-29 出版日期:2011-11-15 发布日期:2011-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10574047) and the Key Program of the National Natural Science Foundation of China (Grant No. 20490210).

Fabrication and photoluminescence characteristics of In₂O₃ nanohillocks

Wei He-Lin(魏合林)^†, Zhang Lei(张磊), Liu Zu-Li(刘祖黎), and Yao Kai-Lun(姚凯伦)

Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2010-07-27 Revised:2011-06-29 Online:2011-11-15 Published:2011-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10574047) and the Key Program of the National Natural Science Foundation of China (Grant No. 20490210).

摘要/Abstract

摘要： Uniformly distributed polycrystalline indium nanohillocks are synthesized on silicon substrates with Au catalyst by using the radio frequency magnetic sputtering technique. The results show that the Au catalyst plays a key role in the formation of indium nanohillocks. After thermally oxidizing the indium nanohillocks at 500 ℃ in air for 5 h, the indium nanohillocks totally transform into In₂O₃ nanohillocks. The energy-dispersive X-ray spectroscopy result indicates that many oxygen vacancies and oxygen-indium vacancy pairs exist in the In₂O₃ nanohillocks. Photoluminescence spectra under an Ne laser excitation at 280 nm show broad emissions at 420 nm and 470 nm with a shoulder at 450 nm related to oxygen vacancies and oxygen-indium vacancies at room temperature.

Abstract: Uniformly distributed polycrystalline indium nanohillocks are synthesized on silicon substrates with Au catalyst by using the radio frequency magnetic sputtering technique. The results show that the Au catalyst plays a key role in the formation of indium nanohillocks. After thermally oxidizing the indium nanohillocks at 500 ℃ in air for 5 h, the indium nanohillocks totally transform into In₂O₃ nanohillocks. The energy-dispersive X-ray spectroscopy result indicates that many oxygen vacancies and oxygen-indium vacancy pairs exist in the In₂O₃ nanohillocks. Photoluminescence spectra under an Ne laser excitation at 280 nm show broad emissions at 420 nm and 470 nm with a shoulder at 450 nm related to oxygen vacancies and oxygen-indium vacancies at room temperature.

Key words: In₂O₃ nanohillocks, magnetron sputtering, growth models, low-dimensional alloy surface

中图分类号: (Deposition by sputtering)

81.15.Cd

78.55.-m (Photoluminescence, properties and materials)

魏合林, 张磊, 刘祖黎, 姚凯伦. Fabrication and photoluminescence characteristics of In₂O₃ nanohillocks[J]. 中国物理B, 2011, 20(11): 118102-118102.

Wei He-Lin(魏合林), Zhang Lei(张磊), Liu Zu-Li(刘祖黎), and Yao Kai-Lun(姚凯伦) . Fabrication and photoluminescence characteristics of In₂O₃ nanohillocks[J]. Chin. Phys. B, 2011, 20(11): 118102-118102.

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Fabrication and photoluminescence characteristics of In₂O₃ nanohillocks

Fabrication and photoluminescence characteristics of In₂O₃ nanohillocks

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