中国物理B ›› 2006, Vol. 15 ›› Issue (4): 773-777.doi: 10.1088/1009-1963/15/4/018

• • 上一篇    下一篇

Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires

张志勇1, 唐为华2, 符秀丽2, 李玲红3   

  1. (1)Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences,Beijing 100080, China; (2)Department of Physics, Center for Optoelectronics materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences,Be; (3)Department of Physics, University of Dayton, Dayton, OH 45469, USA
  • 收稿日期:2005-12-08 修回日期:2005-12-30 出版日期:2006-04-20 发布日期:2006-04-20
  • 基金资助:
    Project supported by the key project of Zhejiang Provincial Natural Science Foundation (Grant No Z605131) and the National Natural Science Foundation of China (Grant No 60571029). Tang Wei-Hua was supported by the 100-outstanding Talents Project of Chinese Academy of Sciences and the Creative Research Group of National Natural Science Foundation of China (Grant No 60321001).

Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires

Tang Wei-Hua (唐为华)ab, Fu Xiu-Li (符秀丽)ab, Zhang Zhi-Yong (张志勇)b, Li Ling-Hong (李玲红)c   

  1. a Department of Physics, Center for Optoelectronics materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; c Department of Physics, University of Dayton, Dayton, OH 45469, USA
  • Received:2005-12-08 Revised:2005-12-30 Online:2006-04-20 Published:2006-04-20
  • Supported by:
    Project supported by the key project of Zhejiang Provincial Natural Science Foundation (Grant No Z605131) and the National Natural Science Foundation of China (Grant No 60571029). Tang Wei-Hua was supported by the 100-outstanding Talents Project of Chinese Academy of Sciences and the Creative Research Group of National Natural Science Foundation of China (Grant No 60321001).

PDF (PC)

801

赞

摘要： Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. I-V curves of individual Cr-doped CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity (10.96 \Omega -1cm-1, indicating great potential applications in nanoscale electronic and optoelectronic devices.

关键词: CdS nanowires, electrical properties, luminescent properties

Abstract: Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. I-V curves of individual Cr-doped CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity (10.96 $\Omega$ -1cm-1, indicating great potential applications in nanoscale electronic and optoelectronic devices.

Key words: CdS nanowires, electrical properties, luminescent properties

中图分类号:  (Nanoscale materials and structures: fabrication and characterization)

  • 81.07.-b
61.46.-w (Structure of nanoscale materials) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 72.80.Ey (III-V and II-VI semiconductors) 78.55.Et (II-VI semiconductors) 78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures) 85.35.-p (Nanoelectronic devices)