中国物理B ›› 2006, Vol. 15 ›› Issue (12): 3019-3025.doi: 10.1088/1009-1963/15/12/041

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

宋红州, 张 平, 段素青, 赵宪庚   

  1. Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
  • 收稿日期:2006-02-28 修回日期:2006-07-19 出版日期:2006-12-20 发布日期:2006-12-20

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

Song Hong-Zhou(宋红州), Zhang Ping(张平)†, Duan Su-Qing(段素青), and Zhao Xian-Geng(赵宪庚)   

  1. Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
  • Received:2006-02-28 Revised:2006-07-19 Online:2006-12-20 Published:2006-12-20

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摘要： We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.

Abstract: We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.

Key words: Hall effect, spin--orbit coupling, spintronics, spin transport

中图分类号:  (Quantum wells)

  • 73.63.Hs
71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect) 72.10.Bg (General formulation of transport theory) 72.20.My (Galvanomagnetic and other magnetotransport effects) 72.25.Dc (Spin polarized transport in semiconductors) 72.80.Ey (III-V and II-VI semiconductors)