Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/22/11/117306

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117306-117306.doi: 10.1088/1674-1056/22/11/117306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

谭仁兵^{a b c}, 秦华^a, 张晓渝^a, 徐文^d

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
c University of Chinese Academy of Sciences, Beijing 100049, China;
d Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

收稿日期:2013-03-18 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2009CB929303), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant Nos. Y0BAQ31001 and KJCX2-EW-705), and the National Natural Science Foundation of China (Grant Nos. 61271157, 61107093, and 10834004).

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Tan Ren-Bing (谭仁兵)^{a b c}, Qin Hua (秦华)^a, Zhang Xiao-Yu (张晓渝)^a, Xu Wen (徐文)^d

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
c University of Chinese Academy of Sciences, Beijing 100049, China;
d Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

Received:2013-03-18 Online:2013-09-28 Published:2013-09-28
Contact: Qin Hua E-mail:hqin2007@sinano.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2009CB929303), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant Nos. Y0BAQ31001 and KJCX2-EW-705), and the National Natural Science Foundation of China (Grant Nos. 61271157, 61107093, and 10834004).

摘要/Abstract

摘要： We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi–Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi–Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source–drain bias voltage besides the gate voltage (change of the electron density).

关键词: two-dimensional electron gas, plasmon, AlGaN/GaN, high electron mobility transistor

Abstract: We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi–Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi–Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source–drain bias voltage besides the gate voltage (change of the electron density).

Key words: two-dimensional electron gas, plasmon, AlGaN/GaN, high electron mobility transistor

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.21.Fg (Quantum wells) 73.63.Hs (Quantum wells)

谭仁兵, 秦华, 张晓渝, 徐文. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2013, 22(11): 117306-117306.

Tan Ren-Bing (谭仁兵), Qin Hua (秦华), Zhang Xiao-Yu (张晓渝), Xu Wen (徐文). Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors[J]. Chin. Phys. B, 2013, 22(11): 117306-117306.

参考文献 26

[1]	Okisu N, Sambe Y and Kobayashi T 1986 Appl. Phys. Lett. 48 776
[2]	Dyakonov M and Shur M 1993 Phys. Rev. Lett. 71 2465
[3]	Dyakonov M and Shur M 1996 IEEE Trans. Electron Devices 43 380
[4]	Otsuji T, Meziani Y M, Hanabe M, Ishibashi T, Uno T and Sano E 2006 Appl. Phys. Lett. 89 263502
[5]	Meziani Y M, Handa H, Knap W, Otsuji T, Sano E, Popov V V, Tsymbalov G M, Coquillat D and Teppe F 2008 Appl. Phys. Lett. 92 201108
[6]	Saxena H, Peale R E and Buchwald W R 2009 J. Appl. Phys. 105 113101
[7]	Fatimy A E, Dyakonova N, Meziani Y, Otsuji T, Knap W, Vandenbrouk S, Madjour K, Théron D, Gaquiere C, Poisson M A, Delage S, Prystawko P and Skierbiszewski C 2010 J. Appl. Phys. 107 024504
[8]	Peralta X G, Allen S J, Wanke M C, Harff N E, Simmons J A, Lilly M P, Reno J L, Burke P J and Eisenstein J P 2002 Appl. Phys. Lett. 81 1627
[9]	Sun Y F, Sun J D, Zhou Y, Tan R B, Zeng C H, Xue W, Qin H, Zhang B S and Wu D M 2011 Appl. Phys. Lett. 98 252103
[10]	Sun Y F, Sun J D, Zhang X Y, Qin H, Zhang B S and Wu D M 2012 Chin. Phys. B 21 108504
[11]	Sun J D, Sun Y F, Wu D M, Cai Y, Qin H and Zhang B S 2012 Appl. Phys. Lett. 100 013506
[12]	Sun J D, Qin H, Lewis R A, Sun Y F, Zhang X Y, Cai Y, Wu D M and Zhang B S 2012 Appl. Phys. Lett. 100 173513
[13]	Rabbaa S and Stiens J 2011 J. Phys. D: Appl. Phys. 44 325103
[14]	Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
[15]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[16]	Chow T P and Tyagi R 1994 IEEE Trans. Electron Devices 41 1481
[17]	Tilak V, Green B, Kaper V, Kim H, Prunty T, Smart J, Shealy J and Eastman L 2001 IEEE Electron Device Lett. 22 504
[18]	Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
[19]	Stern F and Howard W E 1967 Phys. Rev. 163 816
[20]	Lei X L, Birman J L and Ting C S 1985 J. Appl. Phys. 58 2270
[21]	Chattopadhyay D and Queisser H J 1981 Rev. Mod. Phys. 53 745
[22]	Xu W, Peeters F M and Devreese J T 1991 Phys. Rev. B 43 14134
[23]	Xu W and Zhang C 1997 Phys. Rev. B 55 5259
[24]	Tan R B, Xu W, Zhou Y, Zhang X Y and Qin H 2012 Physica B 407 4277
[25]	Stern F 1967 Phys. Rev. Lett. 18 546
[26]	Wang X F 2005 Phys. Rev. B 72 085317

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

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