中国物理B ›› 2006, Vol. 15 ›› Issue (10): 2445-2449.doi: 10.1088/1009-1963/15/10/043

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Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films

骆　军1, 苏　俊1, 张　毅1, 孙宝娟1, 饶光辉1, 刘泉林2, 梁敬魁3, 刘福生4   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China; (3)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China; (4)Department of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sc
  • 收稿日期:2006-03-11 修回日期:2006-06-06 出版日期:2006-10-20 发布日期:2006-10-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50372082).

Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films

Liu Fu-Sheng(刘福生)a)b), Liu Quan-Lin(刘泉林)b)c)†, Liang Jing-Kui(梁敬魁)b)d), Luo Jun(骆军)b), Su Jun(苏俊)b), Zhang Yi(张毅)b), Sun Bao-Juan(孙宝娟)b), and Rao Guang-Hui(饶光辉)b)   

  1. a Department of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; c Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, Chinad International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
  • Received:2006-03-11 Revised:2006-06-06 Online:2006-10-20 Published:2006-10-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50372082).

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摘要： Visible photoluminescence (PL) has been observed from rare earth (Tm, Sm and Dy)-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80--110nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of 1D2 to 3F4 and 1G2 to 3H6 intra 4f electron of Tm3+, the yellow emissions of AlN:Sm are due to 4G5/2 to the 6HJ (J = 5/2, 7/2, 9/2, 11/2) and the reddish emissions of AlN:Dy correspond to the 4F9/2 to 6HJ (J = 15/2, 13/2, 11/2 and 9/2) and 6F11/2 transitions.

关键词: photoluminescence, III-V semiconductor, thin film growth

Abstract: Visible photoluminescence (PL) has been observed from rare earth (Tm, Sm and Dy)-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80--110nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of 1D2 to 3F4 and 1G2 to 3H6 intra 4f electron of Tm3+, the yellow emissions of AlN:Sm are due to 4G5/2 to the 6HJ (J = 5/2, 7/2, 9/2, 11/2) and the reddish emissions of AlN:Dy correspond to the 4F9/2 to 6HJ (J = 15/2, 13/2, 11/2 and 9/2) and 6F11/2 transitions.

Key words: photoluminescence, III-V semiconductor, thin film growth

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
61.05.cp (X-ray diffraction) 68.55.-a (Thin film structure and morphology) 81.15.Cd (Deposition by sputtering)