中国物理B ›› 2004, Vol. 13 ›› Issue (11): 1936-1940.doi: 10.1088/1009-1963/13/11/031
王春明, 王矜奉, 王春雷, 陈洪存, 苏文斌, 臧国忠, 亓鹏, 赵明磊, 明保全
Wang Chun-Ming (王春明), Wang Jin-Feng (王矜奉), Wang Chun-Lei (王春雷), Chen Hong-Cun (陈洪存), Su Wen-Bin (苏文斌), Zang Guo-Zhong (臧国忠), Qi Peng (亓鹏), Zhao Ming-Lei (赵明磊), Ming Bao-Quan (明保全)
摘要: The effects of barium on electrical and dielectric properties of the SnO_2·Co_2O_3·Ta_2O_5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO_3 concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO_{2}-based varistors.
中图分类号: (Permittivity (dielectric function))