中国物理B ›› 2001, Vol. 10 ›› Issue (4): 324-328.doi: 10.1088/1009-1963/10/4/312
ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OF a-SiOCF FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION
丁士进1, 王鹏飞1, 张卫1, 王季陶1, Wei William Lee2
- (1)Department of Electronic Engineering, Fudan University, Shanghai 200433, China; (2)Taiwan Semiconductor Manufacturing Co. (TSMC), Hsinchu, Taiwan, China
ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OF a-SiOCF FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION
Ding Shi-jin (丁士进)a, Wang Peng-fei (王鹏飞)a, Zhang Wei (张卫)a, Wang Ji-tao (王季陶), Wei William Leeb
- a Department of Electronic Engineering, Fudan University, Shanghai 200433, China; b Taiwan Semiconductor Manufacturing Co. (TSMC), Hsinchu, Taiwan, China
摘要： The preparation of a-SiOCF films from Si(OC2H5)4, C4F8 and/or Ar using the plasma-enhanced chemical vapour deposition method is reported. The chemical bonding structures of the films are analysed by x-ray photoelectron spectroscopy (XPS). In the case of the films deposited from the mixture with and without Ar, the configurations of F-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F are contained. However, there is also the C-C configuration in the film prepared from the mixture with Ar. Moreover, it is found that the photoelectron peaks of Si 2p, O 1s and F 1s for the film deposited from the feeding gas with Ar show the same shift of about 1eV toward high binding energy in comparison with those for the film prepared from the feeding gas without Ar. No evidence reveals the presence of an Si-C bond in the films.
中图分类号: (Adsorbed layers and thin films)
- 79.60.Dp