中国物理B ›› 1999, Vol. 8 ›› Issue (8): 624-628.doi: 10.1088/1004-423X/8/8/010

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    

EFFECT OF DOPANT ON THE UNIFORMITY OF InAs SELF-ORGANIZED QUANTUM DOTS

王海龙, 朱海军, 封松林, 宁东, 汪辉, 王晓东, 江德生   

  1. National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 收稿日期:1999-04-08 出版日期:1999-08-20 发布日期:1999-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China(Grant No.69776016 and 19823001) and the State Key Program for Basic Research.

EFFECT OF DOPANT ON THE UNIFORMITY OF InAs SELF-ORGANIZED QUANTUM DOTS

WANG HAI-LONG (王海龙), ZHU HAI-JUN (朱海军), FENG SONG-LIN (封松林), NING DONG (宁东), WANG HUI (汪辉), WANG XIAO-DONG (王晓东), JIANG DE-SHENG (江德生)   

  1. National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • Received:1999-04-08 Online:1999-08-20 Published:1999-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China(Grant No.69776016 and 19823001) and the State Key Program for Basic Research.

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摘要： Low-temperature photoluminescence studies have been performed on Si-doped and Bedoped self-organized InAs/GaAs quantum dot(QD) samples to investigate the effect of doping. When Si or Be is doped into the sample,a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more smalll uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.

Abstract: Low-temperature photoluminescence studies have been performed on Si-doped and Bedoped self-organized InAs/GaAs quantum dot(QD) samples to investigate the effect of doping. When Si or Be is doped into the sample,a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more smalll uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.

中图分类号:  (Quantum dots)

  • 78.67.Hc
78.55.Cr (III-V semiconductors) 61.72.uj (III-V and II-VI semiconductors) 68.65.Hb (Quantum dots (patterned in quantum wells))