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EFFECT OF DOPANT ON THE UNIFORMITY OF InAs SELF-ORGANIZED QUANTUM DOTS
王海龙, 朱海军, 封松林, 宁东, 汪辉, 王晓东, 江德生
1999 (8):
624-628.
doi: 10.1088/1004-423X/8/8/010
摘要
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Low-temperature photoluminescence studies have been performed on Si-doped and Bedoped self-organized InAs/GaAs quantum dot(QD) samples to investigate the effect of doping. When Si or Be is doped into the sample,a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more smalll uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.
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