中国物理B ›› 2026, Vol. 35 ›› Issue (7): 77512-077512.doi: 10.1088/1674-1056/ae5788

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Magnetic proximity-induced magnetoresistance in Pt/Tm3Fe5O12 heterostructures

Zhengguo Liang(梁正国), Kunjie Dai(戴坤杰), Qiming Lv(吕崎鸣), Ao Wang(王傲), Jinfeng Zhang(章金凤), and Lingfei Wang(王凌飞)   

  1. Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2026-02-13 修回日期:2026-03-24 接受日期:2026-03-26 发布日期:2026-07-10
  • 通讯作者: Lingfei Wang E-mail:wanglf@ustc.edu.cn
  • 基金资助:
    This work is supported by the National Basic Research Program of China (Grant No. 2023YFA1406404), the National Natural Science Foundation of China (Grant Nos. 12504152, 52572144, 12304153, 12374094, 12074365, 11974326, and 12274120), the Fundamental Research Funds for the Central Universities (Grant No. WK9990000158), CAS Project for Young Scientists in Basic Research (Grant No. YSBR-084), Innovation Program for Quantum Science and Technology (Grant No. 2024ZD0301300), the China Postdoctoral Science Foundation (Grant No. 2024M763130), the China Postdoctoral Science Foundation - Anhui Joint Support Program (Grant No. 2024T007AH), Anhui Provincial Natural Science Foundation (Grant No. 2308085MA15).

Magnetic proximity-induced magnetoresistance in Pt/Tm3Fe5O12 heterostructures

Zhengguo Liang(梁正国), Kunjie Dai(戴坤杰), Qiming Lv(吕崎鸣), Ao Wang(王傲), Jinfeng Zhang(章金凤), and Lingfei Wang(王凌飞)   

  1. Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
  • Received:2026-02-13 Revised:2026-03-24 Accepted:2026-03-26 Published:2026-07-10
  • Contact: Lingfei Wang E-mail:wanglf@ustc.edu.cn
  • Supported by:
    This work is supported by the National Basic Research Program of China (Grant No. 2023YFA1406404), the National Natural Science Foundation of China (Grant Nos. 12504152, 52572144, 12304153, 12374094, 12074365, 11974326, and 12274120), the Fundamental Research Funds for the Central Universities (Grant No. WK9990000158), CAS Project for Young Scientists in Basic Research (Grant No. YSBR-084), Innovation Program for Quantum Science and Technology (Grant No. 2024ZD0301300), the China Postdoctoral Science Foundation (Grant No. 2024M763130), the China Postdoctoral Science Foundation - Anhui Joint Support Program (Grant No. 2024T007AH), Anhui Provincial Natural Science Foundation (Grant No. 2308085MA15).

摘要: Thin Pt films on magnetic garnet exhibit ferromagnetic-like transport properties, which may affect the functionality of Pt in spin current detection, although direct observation of this effect has not been made. Here, we report the observation of a magnetic proximity-induced magnetoresistance (MP-MR) in Pt/Tm$_{3}$Fe$_{5}$O$_{12}$ (TmIG) heterostructures. This electrical signal is directly correlated with the itinerant ferromagnetism induced by the magnetic proximity effect (MPE) at the Pt/TmIG interface. The existence of MP-MR has been unambiguously verified through the insertion of a Cu interlayer and supported by quantitative analysis, which also enables clear differentiation from the spin Hall magnetoresistance (SMR) signal. The weak ferromagnetism observed in Pt follows the typical behavior of itinerant ferromagnetism, as predicted by the Stoner criterion. By utilizing TmIG films with enhanced perpendicular magnetic anisotropy (PMA), we achieve amplification of the MP-MR effect. Our results demonstrate that the magnitude of MP-MR increases with decreasing temperature. Moreover, the strength of MP-MR can be substantially enhanced through improved PMA in TmIG. These findings underscore the potential of MPE-based magnetotransport phenomena for advancing spintronic device applications.

关键词: magnetic proximity effect, magnetic garnet, itinerant ferromagnetism, perpendicular magnetic anisotropy

Abstract: Thin Pt films on magnetic garnet exhibit ferromagnetic-like transport properties, which may affect the functionality of Pt in spin current detection, although direct observation of this effect has not been made. Here, we report the observation of a magnetic proximity-induced magnetoresistance (MP-MR) in Pt/Tm$_{3}$Fe$_{5}$O$_{12}$ (TmIG) heterostructures. This electrical signal is directly correlated with the itinerant ferromagnetism induced by the magnetic proximity effect (MPE) at the Pt/TmIG interface. The existence of MP-MR has been unambiguously verified through the insertion of a Cu interlayer and supported by quantitative analysis, which also enables clear differentiation from the spin Hall magnetoresistance (SMR) signal. The weak ferromagnetism observed in Pt follows the typical behavior of itinerant ferromagnetism, as predicted by the Stoner criterion. By utilizing TmIG films with enhanced perpendicular magnetic anisotropy (PMA), we achieve amplification of the MP-MR effect. Our results demonstrate that the magnitude of MP-MR increases with decreasing temperature. Moreover, the strength of MP-MR can be substantially enhanced through improved PMA in TmIG. These findings underscore the potential of MPE-based magnetotransport phenomena for advancing spintronic device applications.

Key words: magnetic proximity effect, magnetic garnet, itinerant ferromagnetism, perpendicular magnetic anisotropy

中图分类号:  (Magnetotransport phenomena; materials for magnetotransport)

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