中国物理B ›› 2026, Vol. 35 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/ae3233

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Strain-mediated voltage control of skyrmion transport in nanoracetracks

Hao-Yuan Wang(王灏元)1,2,†, Xue-Feng Zhang(张雪枫)1,2,†, Tian Qiu(邱添)1,3,†, Huiting Li(李慧婷)1,2, Xiao-Ping Ma(马晓萍)1,2,‡, Je-Ho Shim(沈帝虎)1,2, Xing-Ri Jin(金星日)1,2, and Hong-Guang Piao(朴红光)1,2,§   

  1. 1 Department of Physics, College of Science, Yanbian University, Yanji 133002, China;
    2 Institute of Quantum Science and Technology, Yanbian University, Yanji 133002, China;
    3 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
  • 收稿日期:2025-09-30 修回日期:2025-12-30 接受日期:2025-12-31 发布日期:2026-06-18
  • 通讯作者: Xiao-Ping Ma, Hong-Guang Piao E-mail:xpma1222@ybu.edu.cn;hgpiao@ybu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 12364020), the Scientific and Technological Development Plan of Jilin Province (Grant No. 20240101295JC), and the Applied Foundation Research Project (Talent Funding Project) of Yanbian University (Grant No. ydkj202241).

Strain-mediated voltage control of skyrmion transport in nanoracetracks

Hao-Yuan Wang(王灏元)1,2,†, Xue-Feng Zhang(张雪枫)1,2,†, Tian Qiu(邱添)1,3,†, Huiting Li(李慧婷)1,2, Xiao-Ping Ma(马晓萍)1,2,‡, Je-Ho Shim(沈帝虎)1,2, Xing-Ri Jin(金星日)1,2, and Hong-Guang Piao(朴红光)1,2,§   

  1. 1 Department of Physics, College of Science, Yanbian University, Yanji 133002, China;
    2 Institute of Quantum Science and Technology, Yanbian University, Yanji 133002, China;
    3 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
  • Received:2025-09-30 Revised:2025-12-30 Accepted:2025-12-31 Published:2026-06-18
  • Contact: Xiao-Ping Ma, Hong-Guang Piao E-mail:xpma1222@ybu.edu.cn;hgpiao@ybu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 12364020), the Scientific and Technological Development Plan of Jilin Province (Grant No. 20240101295JC), and the Applied Foundation Research Project (Talent Funding Project) of Yanbian University (Grant No. ydkj202241).

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摘要： A voltage-gated scheme for controlling the transport of skyrmions in nanoracetracks is proposed using micromagnetic simulations. The scheme utilizes strain-mediated voltage control of magnetism to effectively modulate local magnetic parameters, including perpendicular magnetic anisotropy, exchange stiffness, the Dzyaloshinskii-Moriya interaction, and saturation magnetization. To understand the effect of voltage-controlled magnetism on skyrmion transport, the dynamic behavior of skyrmions was investigated by varying local magnetic parameters at different driving current densities, thereby revealing the underlying physical mechanism. The results demonstrate that skyrmion annihilation, trapping, blocking, and unblocking can be effectively controlled by coordinating the driving current with the local magnetic parameters. Our scheme offers a practical, low-power electrical control strategy for designing spintronic devices based on skyrmion dynamics.

关键词: spintronics, skyrmions, voltage-controlled magnetism, electrostriction

Abstract: A voltage-gated scheme for controlling the transport of skyrmions in nanoracetracks is proposed using micromagnetic simulations. The scheme utilizes strain-mediated voltage control of magnetism to effectively modulate local magnetic parameters, including perpendicular magnetic anisotropy, exchange stiffness, the Dzyaloshinskii-Moriya interaction, and saturation magnetization. To understand the effect of voltage-controlled magnetism on skyrmion transport, the dynamic behavior of skyrmions was investigated by varying local magnetic parameters at different driving current densities, thereby revealing the underlying physical mechanism. The results demonstrate that skyrmion annihilation, trapping, blocking, and unblocking can be effectively controlled by coordinating the driving current with the local magnetic parameters. Our scheme offers a practical, low-power electrical control strategy for designing spintronic devices based on skyrmion dynamics.

Key words: spintronics, skyrmions, voltage-controlled magnetism, electrostriction

中图分类号:  (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

  • 85.75.-d
75.70.Kw (Domain structure (including magnetic bubbles and vortices)) 72.25.-b (Spin polarized transport) 75.85.+t (Magnetoelectric effects, multiferroics)