中国物理B ›› 2026, Vol. 35 ›› Issue (6): 67501-067501.doi: 10.1088/1674-1056/ae3e73

• • 上一篇    下一篇

The rise of van der Waals multiferroic heterostructures: Interfacial physics and devices

Yihao Zhao(赵一豪)1, Hongxu Duan(段虹旭)1, Tai Min(闵泰)1,2,†, and Tao Li(李桃)1,‡   

  1. 1 Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
    2 National Laboratory of Solid-State Microstructures and School of Materials Science and Intelligent Engineering, Nanjing University, Suzhou 215163, China
  • 收稿日期:2025-12-01 修回日期:2026-01-26 接受日期:2026-01-28 发布日期:2026-06-18
  • 通讯作者: Tai Min, Tao Li E-mail:tai.min@nju.edu.cn;taoli66@xjtu.edu.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2021YFA1202200).

The rise of van der Waals multiferroic heterostructures: Interfacial physics and devices

Yihao Zhao(赵一豪)1, Hongxu Duan(段虹旭)1, Tai Min(闵泰)1,2,†, and Tao Li(李桃)1,‡   

  1. 1 Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
    2 National Laboratory of Solid-State Microstructures and School of Materials Science and Intelligent Engineering, Nanjing University, Suzhou 215163, China
  • Received:2025-12-01 Revised:2026-01-26 Accepted:2026-01-28 Published:2026-06-18
  • Contact: Tai Min, Tao Li E-mail:tai.min@nju.edu.cn;taoli66@xjtu.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2021YFA1202200).

摘要: Van der Waals (vdW) multiferroic heterostructures, formed by stacking two-dimensional (2D) ferroelectric and magnetic materials, have emerged as a highly promising platform for next-generation electronic devices. The atomically sharp, dangling-bond-free interfaces of these heterostructures, combined with unprecedented design freedom unrestricted by lattice-matching constraints, provide an ideal playground for exploring novel magnetoelectric phenomena. This review systematically surveys the fundamental progress, challenges, and future applications in this rapidly advancing field. We begin by examining the three key interfacial magnetoelectric coupling mechanisms that have been theoretically proposed: polarization-gated interfacial charge transfer, interfacial orbital hybridization, and polarization-modulated interfacial Dzyaloshinskii-Moriya interaction (DMI). Subsequently, we bridge theory and practice by reviewing pivotal experimental demonstrations, from initial proof-of-concept work in hybrid-dimensional systems and intrinsic-mechanism explorations in low-temperature all-vdW systems to the landmark breakthrough of non-volatile electrical control of magnetism at room temperature. Building on this physical foundation, we highlight the immense potential of this field for future device applications, focusing on three promising paradigms, including ultra-low-power memory and logic, brain-inspired neuromorphic computing, and topological spintronics based on the electrical manipulation of skyrmions. Finally, we conclude by summarizing current research bottlenecks and outlining key future directions to transition this promising field from fundamental research to tangible technology.

关键词: multiferroics, Van der Waals heterostructures, magnetoelectric coupling, two-dimensional materials, spintronics

Abstract: Van der Waals (vdW) multiferroic heterostructures, formed by stacking two-dimensional (2D) ferroelectric and magnetic materials, have emerged as a highly promising platform for next-generation electronic devices. The atomically sharp, dangling-bond-free interfaces of these heterostructures, combined with unprecedented design freedom unrestricted by lattice-matching constraints, provide an ideal playground for exploring novel magnetoelectric phenomena. This review systematically surveys the fundamental progress, challenges, and future applications in this rapidly advancing field. We begin by examining the three key interfacial magnetoelectric coupling mechanisms that have been theoretically proposed: polarization-gated interfacial charge transfer, interfacial orbital hybridization, and polarization-modulated interfacial Dzyaloshinskii-Moriya interaction (DMI). Subsequently, we bridge theory and practice by reviewing pivotal experimental demonstrations, from initial proof-of-concept work in hybrid-dimensional systems and intrinsic-mechanism explorations in low-temperature all-vdW systems to the landmark breakthrough of non-volatile electrical control of magnetism at room temperature. Building on this physical foundation, we highlight the immense potential of this field for future device applications, focusing on three promising paradigms, including ultra-low-power memory and logic, brain-inspired neuromorphic computing, and topological spintronics based on the electrical manipulation of skyrmions. Finally, we conclude by summarizing current research bottlenecks and outlining key future directions to transition this promising field from fundamental research to tangible technology.

Key words: multiferroics, Van der Waals heterostructures, magnetoelectric coupling, two-dimensional materials, spintronics

中图分类号:  (Magnetoelectric effects, multiferroics)

  • 75.85.+t
07.79.-v (Scanning probe microscopes and components) 77.55.Nv (Multiferroic/magnetoelectric films) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)