中国物理B ›› 2026, Vol. 35 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/adfdc8

• • 上一篇    

Enhanced thermal stability of OLEDs based on an organic n-p heterojunction and its derivative

Wei Shi(施薇)1,2, Wei Zhao(赵微)1,2, Bingjia Zhao(赵冰佳)1,2,3, Yangyang Zhu(朱杨洋)1,2, Yang Lin(林洋)1,2, Yachen Xu(徐亚晨)1,2, Weixia Lan(兰伟霞)1,2,4,†, and Bin Wei(魏斌)1,2,4   

  1. 1 School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China;
    2 Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;
    3 School of Microelectronics, Shanghai University, Shanghai 200444, China;
    4 Nanan Institute of Shanghai University, Nan'an 362300, China
  • 收稿日期:2025-06-20 修回日期:2025-08-01 接受日期:2025-08-21 发布日期:2026-02-11
  • 基金资助:
    This work was financially supported by the National Natural Science Foundation of China (Grant No. 62304127) and the Natural Science Foundation of Shanghai Municipality (Grant No. 24ZR1422300).

Enhanced thermal stability of OLEDs based on an organic n-p heterojunction and its derivative

Wei Shi(施薇)1,2, Wei Zhao(赵微)1,2, Bingjia Zhao(赵冰佳)1,2,3, Yangyang Zhu(朱杨洋)1,2, Yang Lin(林洋)1,2, Yachen Xu(徐亚晨)1,2, Weixia Lan(兰伟霞)1,2,4,†, and Bin Wei(魏斌)1,2,4   

  1. 1 School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China;
    2 Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;
    3 School of Microelectronics, Shanghai University, Shanghai 200444, China;
    4 Nanan Institute of Shanghai University, Nan'an 362300, China
  • Received:2025-06-20 Revised:2025-08-01 Accepted:2025-08-21 Published:2026-02-11
  • Contact: Weixia Lan E-mail:weixia_lan@shu.edu.cn
  • Supported by:
    This work was financially supported by the National Natural Science Foundation of China (Grant No. 62304127) and the Natural Science Foundation of Shanghai Municipality (Grant No. 24ZR1422300).

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摘要： To address the issues of insufficient thermal stability in charge generation layers (CGLs) and carrier imbalance induced by high-temperature annealing in organic light-emitting diodes (OLEDs), this study proposes a metal oxide-doped organic n-p heterojunction (BPhen:Ag$_{2}$O/NPB:MoO$_{3}$) as the core functional layer and designs novel device structures based on its derivatives. By analyzing the performance evolution of heterojunction thin films and OLEDs under annealing treatments ranging from 27 $^\circ$C to 100 $^\circ$C, it was found that after high-temperature annealing, the surface MoO$_{3}$ particles became uniformly dispersed in the heterojunction films, with reduced roughness and no crystallization observed, demonstrating excellent thermal stability. Single-carrier device tests revealed that the current density reached its maximum value at 80 $^\circ$C annealing. In comparison, at 100 $^\circ$C annealing, the current density decreased due to the dissociation of charge-transfer complexes (CTCs), yet it remained higher than that under ambient conditions. Furthermore, the performance degradation of the newly developed p-i-n-p structure OLEDs after high-temperature annealing was significantly smaller compared to conventional p-i-n structures.

关键词: organic light-emitting diodes, metal oxide-doping, organic heterojunction, thermal stability

Abstract: To address the issues of insufficient thermal stability in charge generation layers (CGLs) and carrier imbalance induced by high-temperature annealing in organic light-emitting diodes (OLEDs), this study proposes a metal oxide-doped organic n-p heterojunction (BPhen:Ag$_{2}$O/NPB:MoO$_{3}$) as the core functional layer and designs novel device structures based on its derivatives. By analyzing the performance evolution of heterojunction thin films and OLEDs under annealing treatments ranging from 27 $^\circ$C to 100 $^\circ$C, it was found that after high-temperature annealing, the surface MoO$_{3}$ particles became uniformly dispersed in the heterojunction films, with reduced roughness and no crystallization observed, demonstrating excellent thermal stability. Single-carrier device tests revealed that the current density reached its maximum value at 80 $^\circ$C annealing. In comparison, at 100 $^\circ$C annealing, the current density decreased due to the dissociation of charge-transfer complexes (CTCs), yet it remained higher than that under ambient conditions. Furthermore, the performance degradation of the newly developed p-i-n-p structure OLEDs after high-temperature annealing was significantly smaller compared to conventional p-i-n structures.

Key words: organic light-emitting diodes, metal oxide-doping, organic heterojunction, thermal stability

中图分类号:  (Semiconductor devices)

  • 85.30.-z
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 72.80.Le (Polymers; organic compounds (including organic semiconductors)) 68.60.Dv (Thermal stability; thermal effects)