中国物理B ›› 2025, Vol. 34 ›› Issue (9): 98101-098101.doi: 10.1088/1674-1056/adea5e

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Strain tuning of the transport gap and magnetic order in Dirac fermion systems

Jingyao Meng(孟敬尧)1,†, Zenghui Fan(范增辉)1,†, Miao Ye(叶苗)2, and Tianxing Ma(马天星)1,3,‡   

  1. 1 School of Physics and Astronomy, Beijing Normal University, Beijing 100875, China;
    2 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
    3 Key Laboratory of Multiscale Spin Physics (Ministry of Education), Beijing Normal University, Beijing 100875, China
  • 收稿日期:2025-06-13 修回日期:2025-06-19 接受日期:2025-07-01 出版日期:2025-08-21 发布日期:2025-09-22
  • 通讯作者: Tianxing Ma E-mail:txma@bnu.edu.cn
  • 基金资助:
    This project was supported by the National Natural Science Foundation of China (Grant No. 12474218), the Beijing Natural Science Foundation (Grant No. 1242022), and the Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (Grant No. DH202322).

Strain tuning of the transport gap and magnetic order in Dirac fermion systems

Jingyao Meng(孟敬尧)1,†, Zenghui Fan(范增辉)1,†, Miao Ye(叶苗)2, and Tianxing Ma(马天星)1,3,‡   

  1. 1 School of Physics and Astronomy, Beijing Normal University, Beijing 100875, China;
    2 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
    3 Key Laboratory of Multiscale Spin Physics (Ministry of Education), Beijing Normal University, Beijing 100875, China
  • Received:2025-06-13 Revised:2025-06-19 Accepted:2025-07-01 Online:2025-08-21 Published:2025-09-22
  • Contact: Tianxing Ma E-mail:txma@bnu.edu.cn
  • Supported by:
    This project was supported by the National Natural Science Foundation of China (Grant No. 12474218), the Beijing Natural Science Foundation (Grant No. 1242022), and the Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (Grant No. DH202322).

摘要: Using the determinant quantum Monte Carlo method, we explore a rich phase diagram featuring strain-induced metal-insulator and magnetic phase transitions in an interacting two-dimensional Dirac fermion system. Asymmetric strain applied along the zigzag crystal direction drives the semimetallic regime into a band-insulating phase, or it breaks the antiferromagnetic order of the Mott insulator, inducing a nonmagnetic insulating phase under strong correlations. The critical strain required for band gap opening or for a transport phase transition is significantly reduced in the presence of Coulomb repulsion, while increasing interaction strength makes it more difficult for strain to induce a nonmagnetic phase transition. In addition, we measure in detail the band gap modulation by strain and identify a doping effect whereby doping inhibits band gap opening. Our results provide an effective way to tune the transport gap, which could help extend the applications of graphene, whose zero band gap currently limits its use.

关键词: strained graphene, Hubbard model, metal-insulator transition, magnetism

Abstract: Using the determinant quantum Monte Carlo method, we explore a rich phase diagram featuring strain-induced metal-insulator and magnetic phase transitions in an interacting two-dimensional Dirac fermion system. Asymmetric strain applied along the zigzag crystal direction drives the semimetallic regime into a band-insulating phase, or it breaks the antiferromagnetic order of the Mott insulator, inducing a nonmagnetic insulating phase under strong correlations. The critical strain required for band gap opening or for a transport phase transition is significantly reduced in the presence of Coulomb repulsion, while increasing interaction strength makes it more difficult for strain to induce a nonmagnetic phase transition. In addition, we measure in detail the band gap modulation by strain and identify a doping effect whereby doping inhibits band gap opening. Our results provide an effective way to tune the transport gap, which could help extend the applications of graphene, whose zero band gap currently limits its use.

Key words: strained graphene, Hubbard model, metal-insulator transition, magnetism

中图分类号:  (Graphene)

  • 81.05.ue
71.10.Fd (Lattice fermion models (Hubbard model, etc.)) 68.35.Gy (Mechanical properties; surface strains)