中国物理B ›› 2025, Vol. 34 ›› Issue (10): 107101-107101.doi: 10.1088/1674-1056/adda0b

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Single crystal growth and electronic structure of Fe-doped Sr3Ir2O7

Muhammad Waqas1, Bingqian Wang(王冰倩)1, Shuting Peng(彭舒婷)1, Jianchang Shen(沈建昌)1,2, Linwei Huai(淮琳崴)1,2, Xiupeng Sun(孙秀鹏)1,2, Yu Miao(缪宇)1,2, Pelda Uzun1, Runqing Luan(栾润青)1,2, Zikun Feng(冯梓琨)1,2, Dai Pan(潘岱)1,2, Xinru Yong(勇欣茹)1,2, Hongxu Sun(孙鸿绪)1,2, Zhipeng Ou(欧志鹏)1,2,†, and Junfeng He(何俊峰)1,2,‡   

  1. 1 Department of Physics and CAS (Chinese Academy of Sciences) Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China;
    2 Hefei National Laboratory, University of Science and Technology of China 230088, China
  • 收稿日期:2025-03-17 修回日期:2025-05-13 接受日期:2025-05-19 发布日期:2025-10-09
  • 通讯作者: Zhipeng Ou, Junfeng He E-mail:zhipeng_ou@mail.ustc.edu.cn;jfhe@ustc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 12074358), the National Key Research and Development Program of China (Grant No. 2024YFA1408103), the International Partnership Program of the Chinese Academy of Sciences (Grant No. 123GJHZ2022035MI), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302802), and the Fundamental Research Funds for the Central Universities (Grant No. WK3510000015).

Single crystal growth and electronic structure of Fe-doped Sr3Ir2O7

Muhammad Waqas1, Bingqian Wang(王冰倩)1, Shuting Peng(彭舒婷)1, Jianchang Shen(沈建昌)1,2, Linwei Huai(淮琳崴)1,2, Xiupeng Sun(孙秀鹏)1,2, Yu Miao(缪宇)1,2, Pelda Uzun1, Runqing Luan(栾润青)1,2, Zikun Feng(冯梓琨)1,2, Dai Pan(潘岱)1,2, Xinru Yong(勇欣茹)1,2, Hongxu Sun(孙鸿绪)1,2, Zhipeng Ou(欧志鹏)1,2,†, and Junfeng He(何俊峰)1,2,‡   

  1. 1 Department of Physics and CAS (Chinese Academy of Sciences) Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China;
    2 Hefei National Laboratory, University of Science and Technology of China 230088, China
  • Received:2025-03-17 Revised:2025-05-13 Accepted:2025-05-19 Published:2025-10-09
  • Contact: Zhipeng Ou, Junfeng He E-mail:zhipeng_ou@mail.ustc.edu.cn;jfhe@ustc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 12074358), the National Key Research and Development Program of China (Grant No. 2024YFA1408103), the International Partnership Program of the Chinese Academy of Sciences (Grant No. 123GJHZ2022035MI), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302802), and the Fundamental Research Funds for the Central Universities (Grant No. WK3510000015).

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摘要： Metal-insulator transition (MIT) in perovskite iridium oxides Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ represents one of the most attractive phenomena exemplifying the cooperation of Coulomb interaction and spin-orbit coupling (SOC). MIT takes place when Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ ($n = 1$, 2) is doped with carriers. While electron-doped Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ ($n = 1$, 2) systems have been extensively investigated, hole-doped samples are still limited. Here, we report the first growth of Fe-doped (hole-doped) Sr$_{3}$Ir$_{2}$O$_{7}$ single crystals [Sr$_{3}$(Ir$_{1-x}$Fe$_{x}$)$_{2}$O$_{7}$] with the doping level $0.1\le x \le 0.28$. An MIT behavior is observed at the doping level of $x \sim 0.16$ from resistivity measurements. Electronic structures of Fe-doped Sr$_{3}$Ir$_{2}$O$_{7}$ have been revealed by angle-resolved photoemission spectroscopy (ARPES) measurements. The evident energy shift of the band structure indicates higher hole-doping level as compared with Rh-doped Sr$_{3}$Ir$_{2}$O$_{7}$. Our results demonstrate that Fe doping serves as an effective approach for heavily hole doping in Sr$_{3}$Ir$_{2}$O$_{7}$, thereby offering a powerful strategy to modulate MIT in this material system.

关键词: spin-orbit-coupled Mott insulators, hole-doping, single crystal growth, metal-insulator transition, angle-resolved photoemission spectroscopy (ARPES)

Abstract: Metal-insulator transition (MIT) in perovskite iridium oxides Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ represents one of the most attractive phenomena exemplifying the cooperation of Coulomb interaction and spin-orbit coupling (SOC). MIT takes place when Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ ($n = 1$, 2) is doped with carriers. While electron-doped Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ ($n = 1$, 2) systems have been extensively investigated, hole-doped samples are still limited. Here, we report the first growth of Fe-doped (hole-doped) Sr$_{3}$Ir$_{2}$O$_{7}$ single crystals [Sr$_{3}$(Ir$_{1-x}$Fe$_{x}$)$_{2}$O$_{7}$] with the doping level $0.1\le x \le 0.28$. An MIT behavior is observed at the doping level of $x \sim 0.16$ from resistivity measurements. Electronic structures of Fe-doped Sr$_{3}$Ir$_{2}$O$_{7}$ have been revealed by angle-resolved photoemission spectroscopy (ARPES) measurements. The evident energy shift of the band structure indicates higher hole-doping level as compared with Rh-doped Sr$_{3}$Ir$_{2}$O$_{7}$. Our results demonstrate that Fe doping serves as an effective approach for heavily hole doping in Sr$_{3}$Ir$_{2}$O$_{7}$, thereby offering a powerful strategy to modulate MIT in this material system.

Key words: spin-orbit-coupled Mott insulators, hole-doping, single crystal growth, metal-insulator transition, angle-resolved photoemission spectroscopy (ARPES)

中图分类号:  (Non-Fermi-liquid ground states, electron phase diagrams and phase transitions in model systems)

  • 71.10.Hf
71.20.-b (Electron density of states and band structure of crystalline solids) 71.30.+h (Metal-insulator transitions and other electronic transitions) 71.27.+a (Strongly correlated electron systems; heavy fermions)