中国物理B ›› 2025, Vol. 34 ›› Issue (6): 67303-067303.doi: 10.1088/1674-1056/adc406
Modulating electronic properties of carbon nanotube via constructing one-dimensional vdW heterostructures
Wenqi Lv(吕雯祺)1, Weili Li(李伟立)1, Wei Ji(季威)1,2, and Yanning Zhang(张妍宁)1,†
- 1 Institute of Fundamental and Frontier Sciences, Key Laboratory for Quantum Physics and Photonic Quantum Information of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China
Modulating electronic properties of carbon nanotube via constructing one-dimensional vdW heterostructures
Wenqi Lv(吕雯祺)1, Weili Li(李伟立)1, Wei Ji(季威)1,2, and Yanning Zhang(张妍宁)1,†
- 1 Institute of Fundamental and Frontier Sciences, Key Laboratory for Quantum Physics and Photonic Quantum Information of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China
摘要： Controlling charge polarity in the semiconducting single-walled carbon nanotubes (CNTs) by substitutional doping is a difficult work due to their extremely strong C-C bonding. In this work, an inner doping strategy is explored by filling CNTs with one-dimensional (1D)-$TM_{6}$Te$_{6}$ nanowires to form $TM_{6}$Te$_{6}$@CNT-(16,0) 1D van der Waals heterostructures (1D-vdWHs). The systematic first-principles studies on the electronic properties of 1D-vdWHs show that N-type doping CNTs can be formed by charge transfer from $TM_{6}$Te$_{6}$ nanowires to CNTs, without introducing additional carrier scattering. Particularly, contribution from both $TM$ (e.g., Sc and Y) and Te atoms strengthens the charge transfer. The outside CNTs further confine the dispersion of Te-p orbitals in nanowires that deforms the C-$\pi $ states at the bottom of the conduction band to quasi sp$^{3}$ hybridization. Our study provides an inner doping strategy that can effectively confine the charge polarity of CNTs and further broaden its applications in some novel nano-devices.
中图分类号: (Electronic transport in interface structures)
- 73.40.-c