Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)2As2

doi:10.1088/1674-1056/addbce

中国物理B ›› 2025, Vol. 34 ›› Issue (10): 107510-107510.doi: 10.1088/1674-1056/addbce

Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)₂As₂

Xueqin Zhao(赵雪芹)¹, Jinou Dong(董金瓯)¹, Lingfeng Xie(谢玲凤)¹, Xun Pan(潘洵)¹, Haoyuan Tang(唐浩原)¹, Zhicheng Xu(徐之程)¹, and Fanlong Ning(宁凡龙)^1,2,3,4,†

1 School of Physics, Zhejiang University, Hangzhou 310027, China;
2 Institute for Advanced Study in Physics, Zhejiang University, Hangzhou 310027, China;
3 State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2025-04-30 修回日期:2025-05-14 接受日期:2025-05-22 发布日期:2025-10-11
通讯作者: Fanlong Ning E-mail:ningfl@zju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402701 and 2022YFA1403202), the National Natural Science Foundation of China (Grant No. 12074333), and the Key Research and Development Program of Zhejiang Province, China (Grant No. 2021C01002).

Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)₂As₂

Xueqin Zhao(赵雪芹)¹, Jinou Dong(董金瓯)¹, Lingfeng Xie(谢玲凤)¹, Xun Pan(潘洵)¹, Haoyuan Tang(唐浩原)¹, Zhicheng Xu(徐之程)¹, and Fanlong Ning(宁凡龙)^1,2,3,4,†

1 School of Physics, Zhejiang University, Hangzhou 310027, China;
2 Institute for Advanced Study in Physics, Zhejiang University, Hangzhou 310027, China;
3 State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Received:2025-04-30 Revised:2025-05-14 Accepted:2025-05-22 Published:2025-10-11
Contact: Fanlong Ning E-mail:ningfl@zju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402701 and 2022YFA1403202), the National Natural Science Foundation of China (Grant No. 12074333), and the Key Research and Development Program of Zhejiang Province, China (Grant No. 2021C01002).

摘要/Abstract

摘要： We report the manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)$_{2}$As$_{2}$ through chemical pressure. The substitutions of Sr for Ba and Sb for As introduce positive and negative chemical pressures, respectively; neither Sr doping nor Sb doping change the tetragonal crystal structure. Based on Ba(Zn$_{0.75}$Mn$_{0.125}$Cu$_{0.125}$)$_{2}$As$_{2}$ with $T_{{\rm C}}$ $\sim34$ K, 10% Sr/Ba substitutions significantly improve $T_{{\rm C}}$ by $\sim15$% to 39 K, whereas 10% Sb/As substitutions substantially reduce $T_{{\rm C}}$ by $\sim47$% to 18 K. The AC magnetic susceptibility measurements indicate that Sr-doped and Sb-doped samples evolve into a spin glass state below the spin freezing temperature $T_{{\rm f}}$. Electrical transport measurements demonstrate that Sr-doped specimens retain semiconducting behavior; additionally, they display a significant negative magnetoresistance effect under applied magnetic fields and the magnetoresistance reaches $\sim-19%$ at 8 T.

关键词: magnetic semiconductors, spin-glass, negative magnetoresistance

Abstract: We report the manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)$_{2}$As$_{2}$ through chemical pressure. The substitutions of Sr for Ba and Sb for As introduce positive and negative chemical pressures, respectively; neither Sr doping nor Sb doping change the tetragonal crystal structure. Based on Ba(Zn$_{0.75}$Mn$_{0.125}$Cu$_{0.125}$)$_{2}$As$_{2}$ with $T_{{\rm C}}$ $\sim34$ K, 10% Sr/Ba substitutions significantly improve $T_{{\rm C}}$ by $\sim15$% to 39 K, whereas 10% Sb/As substitutions substantially reduce $T_{{\rm C}}$ by $\sim47$% to 18 K. The AC magnetic susceptibility measurements indicate that Sr-doped and Sb-doped samples evolve into a spin glass state below the spin freezing temperature $T_{{\rm f}}$. Electrical transport measurements demonstrate that Sr-doped specimens retain semiconducting behavior; additionally, they display a significant negative magnetoresistance effect under applied magnetic fields and the magnetoresistance reaches $\sim-19%$ at 8 T.

Key words: magnetic semiconductors, spin-glass, negative magnetoresistance

中图分类号: (Magnetic semiconductors)

75.50.Pp

75.50.Lk (Spin glasses and other random magnets) 75.30.Cr (Saturation moments and magnetic susceptibilities)

Xueqin Zhao(赵雪芹), Jinou Dong(董金瓯), Lingfeng Xie(谢玲凤), Xun Pan(潘洵), Haoyuan Tang(唐浩原), Zhicheng Xu(徐之程), and Fanlong Ning(宁凡龙). Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)₂As₂[J]. 中国物理B, 2025, 34(10): 107510-107510.

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Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)₂As₂

Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)₂As₂

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